型號 | 廠商 | 描述 |
ph955l 2 3 4 5 6 7 8 9 10 11 12 |
NXP SEMICONDUCTORS | Circular Connector; No. of Contacts:16; Series:; Body Material:Aluminum Alloy; Connecting Termination:Solder; Connector Shell Size:20; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle |
ph965c6 2 3 4 5 6 7 8 9 10 11 12 |
FUJI ELECTRIC CO LTD | SPECIFICATION |
ph967c6 2 3 4 5 6 7 8 9 10 11 12 |
FUJI ELECTRIC CO LTD | SPECIFICATION |
pha2731-140l |
Radar Pulsed Power Module, 140W, 300ms, 10% Duty 2.7 - 3.1 GHz | |
pha2731-190m 2 |
Radar Pulsed Power Amplifier-190 Watts 2.7-3.1GHz,200ms Pulse,10% Duty | |
pha3135-130m |
Computers; Leaded Process Compatible:Yes RoHS Compliant: Yes | |
pha4000-1 |
Broadband VHF Power Module, 13W 30 - 400 MHz | |
pha4000-2 |
Broadband VHF Power Module, 64W 30 - 400 MHz | |
phb101nq04t 2 3 4 5 6 7 8 9 10 11 12 13 |
NXP SEMICONDUCTORS | N-channel TrenchMOS standard level FET |
php101nq04t 2 3 4 5 6 7 8 9 10 11 12 13 |
NXP SEMICONDUCTORS | N-channel TrenchMOS standard level FET |
phb10n40 2 3 4 5 6 7 |
NXP SEMICONDUCTORS | CAP 470PF 200V 10% NP0(C0G) DIP-2 TUBE-PAK S-MIL-PRF-39014/22 |
phb110nq06lt 2 3 4 5 6 7 8 9 10 11 12 13 |
NXP SEMICONDUCTORS | N-channel TrenchMOS logic level FET |
php110nq06lt 2 3 4 5 6 7 8 9 10 11 12 13 |
NXP SEMICONDUCTORS | N-channel TrenchMOS logic level FET |
phb110nq08lt 2 3 4 5 6 7 8 9 10 11 12 13 |
NXP SEMICONDUCTORS | N-channel TrenchMOS logic level FET |
php110nq08lt 2 3 4 5 6 7 8 9 10 11 12 13 |
NXP SEMICONDUCTORS | N-channel TrenchMOS logic level FET |
phb222nq04lt 2 3 4 5 6 7 8 9 10 11 12 13 |
NXP SEMICONDUCTORS | N-channel TrenchMOSTM logic level FET |
php222nq04lt 2 3 4 5 6 7 8 9 10 11 12 13 |
NXP SEMICONDUCTORS | N-channel TrenchMOSTM logic level FET |
phb2n50e 2 3 4 5 6 7 8 9 10 |
NXP SEMICONDUCTORS | PowerMOS transistors Avalanche energy rated |
php2n50e 2 3 4 5 6 7 8 9 10 |
NXP SEMICONDUCTORS | PowerMOS transistors Avalanche energy rated |
phd2n50e 2 3 4 5 6 7 8 9 10 |
NXP SEMICONDUCTORS | PowerMOS transistors Avalanche energy rated |
phb2n50 2 3 4 5 6 7 |
NXP SEMICONDUCTORS | PowerMOS transistor |
phb3055e 2 3 4 5 6 7 8 9 10 11 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 12A I(D) | SOT-404 | |
phb30nq15t 2 3 4 5 6 7 8 9 |
NXP SEMICONDUCTORS | CAP 0.1UF 100V 10% X7R AXIAL TR-14 |
phb64n03lt 2 3 4 5 6 7 8 9 10 11 12 |
RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS | |
phb78nq03lt 2 3 4 5 6 7 8 9 10 11 12 13 14 |
NXP SEMICONDUCTORS | N-channel enhancement mode field-effect transistor |
phd78nq03lt 2 3 4 5 6 7 8 9 10 11 12 13 14 |
NXP SEMICONDUCTORS | N-channel enhancement mode field-effect transistor |
phb95n03lta 2 3 4 5 6 7 8 9 10 11 12 |
3.3V Dual Micropower High-Side/Low-Side MOSFET Driver; Package: SO; No of Pins: 8; Temperature Range: 0°C to +70°C | |
phb95nq04lt 2 3 4 5 6 7 8 9 10 11 12 |
NXP SEMICONDUCTORS | N-channel TrenchMOS logic level FET |
phd12n10e 2 3 4 5 6 7 |
NXP SEMICONDUCTORS | PowerMOS transistor |
phd16n03t 2 3 4 5 6 7 8 9 10 11 12 |
NXP SEMICONDUCTORS | TrenchMOS standard level FET |
phd36n03lt 2 3 4 5 6 7 8 9 10 11 12 13 |
NXP SEMICONDUCTORS | N-channel TrenchMOS logic level FET |
php36n03lt 2 3 4 5 6 7 8 9 10 11 12 13 |
NXP SEMICONDUCTORS | N-channel TrenchMOS logic level FET |
phd5n20e 2 3 4 5 6 7 |
NXP SEMICONDUCTORS | PowerMOS transistor |
phd83n03lt 2 3 4 5 6 7 8 9 10 11 12 13 |
NXP SEMICONDUCTORS | N-channel enhancement mode field-effect transistor |
phi214-20el 2 |
Radar Pulsed Power Transistor, 2OW, 2ms Pulse, 10% Duty 1.2 - 1.4 GHz | |
phi214-25l 2 |
Radar Pulsed Power Transistor, 25W, 300ms Pulse, 10% Duty 1.2 - 1.4 GHz | |
phi214-25s 2 |
Radar Pulsed Power Transistor, 25W, lms Pulse, 10% Duty 1.2 - 1.4 GHz | |
phi214-30el 2 |
Radar Pulsed Power Transistor, 3OW, 1 .Oms Pulse, 10% Duty . 1.2 - 1.4 GHz | |
phk24nq04lt 2 3 4 5 6 7 8 9 10 11 12 |
NXP SEMICONDUCTORS | TrenchMOS logic level FET |
phk4nq10t 2 3 4 5 6 7 |
NXP SEMICONDUCTORS | N-channel TrenchMOS transistor |
phk5nq10t 2 3 4 5 6 7 |
NXP SEMICONDUCTORS | N-channel TrenchMOS transistor |
phl2143 2 |
Radar Pulsed Power Transistor, 3W, 2ms Pulse, 20% Duty 1.2 - 1.4 GHz | |
phl516-10 2 3 4 |
Wireless Bipolar Power Transistor, 1OW 1.45 - 1.60 GHz | |
phm004 2 |
Amplifier. Other | |
phm021 |
Amplifier. Other | |
phm022 |
RF AMPLIFIER|SINGLE|MOS|FLANGE MT|PLASTIC | |
phm12nq20t 2 3 4 5 6 7 8 9 10 11 12 |
10-Bit, 500ksps ADCs in MSOP with Auto Shutdown; Package: SO; No of Pins: 8; Temperature Range: 0°C to +70°C | |
phm15nq20t 2 3 4 5 6 7 8 9 10 11 12 13 |
NXP SEMICONDUCTORS | TrenchMOS standard level FET |
phm1880-15 2 |
Wireless Power Module, 15W 1805-1880 MHz | |
phm1990-15 2 |
Microwave/Millimeter Wave Amplifier |