參數(shù)資料
型號： PHD5N20E
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： PowerMOS transistor
中文描述： 5 A, 200 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC PACKAGE-3
文件頁數(shù)： 2/7頁
文件大?。?/td> 55K
代理商： PHD5N20E
Philips Semiconductors
Product specification
PowerMOS transistor
PHD5N20E
ELECTRICAL CHARACTERISTICS
T
j
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
(BR)DSS
Drain-source breakdown
voltage
V
(BR)DSS
/
Drain-source breakdown
T
j
voltage temperature coefficient
R
DS(ON)
Drain-source on resistance
V
GS(TO)
Gate threshold voltage
g
fs
Forward transconductance
I
DSS
Drain-source leakage current
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA
MIN.
200
TYP.
-
MAX.
-
UNIT
V
V
DS
= V
GS
; I
D
= 0.25 mA
-
0.25
-
V/K
V
GS
= 10 V; I
= 2.5 A
V
DS
= V
; I
D
= 0.25 mA
V
DS
= 50 V; I
= 2.5 A
V
DS
= 200 V; V
GS
= 0 V
V
DS
= 160 V; V
GS
= 0 V; T
j
= 150 C
V
GS
=
±
30 V; V
DS
= 0 V
I
D
= 4.8 A; V
DD
= 160 V; V
GS
= 10 V
-
0.68
3.0
3.5
0.1
1
10
11
2
5.3
7
29
27
22
3.5
7.5
0.9
4.0
-
25
250
100
15
3
7
-
-
-
-
-
-
V
S
μ
A
μ
A
nA
nC
nC
nC
ns
ns
ns
ns
nH
nH
2.0
1.5
-
-
-
-
-
-
-
-
-
-
-
-
I
GSS
Q
g(tot)
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
d
L
s
Gate-source leakage current
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Internal source inductance
V
DD
= 100 V; I
D
= 4.8 A;
R
G
= 18
; R
D
= 20
Measured from tab to centre of die
Measured from source lead solder
point to source bond pad
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Feedback capacitance
-
-
-
300
60
20
-
-
-
pF
pF
pF
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
T
j
= 25 C unless otherwise specified
SYMBOL
PARAMETER
I
S
Continuous source current
(body diode)
I
SM
Pulsed source current (body
diode)
V
SD
Diode forward voltage
t
rr
Reverse recovery time
CONDITIONS
T
mb
= 25C
MIN.
-
TYP.
-
MAX.
5
UNIT
A
T
mb
= 25C
-
-
20
A
I
S
= 5.2 A; V
GS
= 0 V
I
= 4.8 A; V
GS
= 0 V;
dI/dt = 100 A/
μ
s
-
-
-
1.5
-
V
ns
114
Q
rr
Reverse recovery charge
-
0.8
-
μ
C
October 1997
2
Rev 1.100
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