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參數(shù)資料
| 型號： | PHD83N03LT |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel enhancement mode field-effect transistor |
| 中文描述： | 72 A, 25 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封裝： | PLASTIC, SC-63, DPAK-3 |
| 文件頁數(shù)： | 1/13頁 |
| 文件大?。?/td> | 282K |
| 代理商： | PHD83N03LT |
PHD83N03LT
N-channel enhancement mode field-effect transistor
Rev. 01 — 16 July 2001
Product data
c
c
M3D300
1.
Description
N-channel logic level field-effect power transistor in a plastic package using
TrenchMOS
1
technology.
Product availability:
PHD83N03LT in a SOT428 (D-PAK).
2.
Features
I
Low on-state resistance
I
Fast switching.
3.
Applications
I
High frequency computer motherboard DC to DC converters
4.
Pinning information
[1]
It is not possible to make connection to pin 2 of the SOT428 package.
1.
TrenchMOS is a trademark of Royal Phillips Electronics.
Table 1:
Pin
Pinning - SOT428, simplified outline and symbol
Description
Simplified outline
Symbol
1
gate (g)
SOT428 (D-Pak)
2
drain (d)
[1]
3
source (s)
mb
mounting base,
connected to drain (d)
MBK091
Top view
1
3
mb
2
s
d
g
MBB076
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| PHD87N03LT | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS transistor Logic level FET |
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| PHD96NQ03LT /T3 | 功能描述:兩極晶體管 - BJT TAPE13 MOSFET RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PHD96NQ03LT,118 | 功能描述:MOSFET TAPE13 MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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