參數(shù)資料
型號(hào)： PHD83N03LT
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： N-channel enhancement mode field-effect transistor
中文描述： 72 A, 25 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封裝： PLASTIC, SC-63, DPAK-3
文件頁數(shù)： 12/13頁
文件大?。?/td> 282K
代理商： PHD83N03LT
Philips Semiconductors
PHD83N03LT
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 — 16 July 2001
12 of 13
9397 750 08217
Philips Electronics N.V. 2001. All rights reserved.
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Internet:
http://www.semiconductors.philips.com
(SCA72)
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參數(shù)描述
PHD87N03LT 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS transistor Logic level FET
PHD95N03LT 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel enhancement mode field-effect transistor
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PHD96NQ03LT /T3 功能描述:兩極晶體管 - BJT TAPE13 MOSFET RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
PHD96NQ03LT,118 功能描述:MOSFET TAPE13 MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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