參數(shù)資料
型號(hào)： PHD12N10E
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： PowerMOS transistor
中文描述： 14 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC, SOT-428, 3 PIN
文件頁數(shù)： 2/7頁
文件大?。?/td> 79K
代理商： PHD12N10E
Philips Semiconductors
Product Specification
PowerMOS transistor
PHD12N10E
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
(BR)DSS
Drain-source breakdown
voltage
V
GS(TO)
Gate threshold voltage
I
DSS
Zero gate voltage drain current
I
DSS
Zero gate voltage drain current
I
GSS
Gate source leakage current
R
DS(ON)
Drain-source on-state
resistance
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA
MIN.
100
TYP.
-
MAX.
-
UNIT
V
V
DS
= V
; I
= 1 mA
V
DS
= 100 V; V
GS
= 0 V; T
j
= 25 C
V
DS
= 100 V; V
GS
= 0 V; T
j
= 125 C
V
GS
=
±
30 V; V
= 0 V
V
GS
= 10 V; I
D
= 5 A
2.1
-
-
-
-
3.0
1
0.1
10
0.15
4.0
10
1.0
100
0.16
V
μ
A
mA
nA
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise specified
SYMBOL
PARAMETER
g
fs
Forward transconductance
C
iss
Input capacitance
C
oss
Output capacitance
C
rss
Feedback capacitance
t
d on
Turn-on delay time
t
r
Turn-on rise time
t
d off
Turn-off delay time
t
f
Turn-off fall time
L
d
Internal drain inductance
L
s
Internal source inductance
CONDITIONS
V
DS
= 25 V; I
D
= 5 A
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
MIN.
4.0
-
-
-
-
-
-
-
-
-
TYP.
5.5
660
140
60
10
25
60
40
3.5
7.5
MAX.
-
825
200
100
20
40
90
55
-
-
UNIT
S
pF
pF
pF
ns
ns
ns
ns
nH
nH
V
DD
= 30 V; I
D
= 3 A;
V
GS
= 10 V; R
GS
= 50
;
R
gen
= 50
Measured from tab to centre of die
Measured from source lead solder
point to source bond pad
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j
= 25 C unless otherwise specified
SYMBOL
PARAMETER
I
DR
Continuous reverse drain
current
I
DRM
Pulsed reverse drain current
V
SD
Diode forward voltage
t
rr
Reverse recovery time
Q
rr
Reverse recovery charge
CONDITIONS
-
MIN.
-
TYP.
-
MAX.
14
UNIT
A
-
I
F
= 14 A ; V
GS
= 0 V
I
F
= 14 A; -dI
F
/dt = 100 A/
μ
s;
V
GS
= 0 V; V
R
= 30 V
-
-
-
-
-
56
1.5
-
-
A
V
ns
μ
C
1.2
90
0.6
AVALANCHE LIMITING VALUE
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
W
DSS
Drain-source non-repetitive
unclamped inductive turn-off
energy
CONDITIONS
I
D
= 14 A; V
DD
≤
50 V; V
GS
= 10 V;
R
GS
= 50
MIN.
-
TYP.
-
MAX.
70
UNIT
mJ
September 1997
2
Rev 1.000
相關(guān)PDF資料
PDF描述
PHD16N03T TrenchMOS standard level FET
PHD36N03LT N-channel TrenchMOS logic level FET
PHP36N03LT N-channel TrenchMOS logic level FET
PHD5N20E PowerMOS transistor
PHD83N03LT N-channel enhancement mode field-effect transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PHD12NQ15T 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS transistor
PHD13003C 制造商:NXP Semiconductors 功能描述:TRANSISTORDIODENPN400V1.5ATO92 制造商:NXP Semiconductors 功能描述:TRANSISTOR,DIODE,NPN,400V,1.5A,TO92 制造商:NXP Semiconductors 功能描述:TRANSISTOR,DIODE,NPN,400V,1.5A,TO92; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Power Dissipation Pd:2.1W; DC Collector Current:1.5A; DC Current Gain hFE:17; No. of Pins:3 ;RoHS Compliant: Yes
PHD13003C,126 功能描述:兩極晶體管 - BJT H-VOLT PWR BPT 700V 2 A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
PHD13003C,412 功能描述:兩極晶體管 - BJT Single NPN 1.5A 2.1W RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
PHD13003C126 制造商:NXP Semiconductors 功能描述:NPN POWER TRANSISTOR 400 V 1.5 A 3-TO
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*