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參數(shù)資料
| 型號： | PHB2N50E |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistors Avalanche energy rated |
| 中文描述： | 2 A, 500 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SOT-404, 3 PIN |
| 文件頁數(shù)： | 6/10頁 |
| 文件大?。?/td> | 75K |
| 代理商： | PHB2N50E |
Philips Semiconductors
Product specification
PowerMOS transistors
Avalanche energy rated
PHP2N50E, PHB2N50E, PHD2N50E
Fig.13. Typical turn-on gate-charge characteristics.
V
GS
= f(Q
G
); parameter V
DS
Fig.14. Typical switching times t
d(on)
, t
r
, t
d(off)
, t
f
= f(R
G
)
Fig.15. Normalised drain-source breakdown voltage
V
(BR)DSS
/V
(BR)DSS 25 C
= f(T
j
)
Fig.16. Source-Drain diode characteristic.
I
F
= f(V
SDS
); parameter T
j
Fig.17. Maximum permissible non-repetitive
avalanche current (I
) versus avalanche time (t
p
);
unclamped inductive load
Fig.18. Maximum permissible repetitive avalanche
current (I
AR
) versus avalanche time (t
p
)
0
10
20
30
40
0
5
10
15
20
PHP2N50
Gate charge, Qg (nC)
Gate-Source voltage, VGS (Volts)
VDD = 400 V
300 V
200 V
ID = 2 A
0
0.5
1
1.5
0
2
4
6
8
10
PHP2N50
Source-Drain voltage, VSDS (V)
Source-drain diode current, IF(A)
VGS = 0 V
150 C
Tj = 25 C
0
20
40
60
80
100
1
10
100
1000
tr
tf
PHP2N50
Gate resistance, RG (Ohms)
Switching times, td(on), tr, td(off), tf (ns)
td(on)
td(off)
VDD = 250V
RD = 120 Ohms
Tj = 25 C
PHP2N50E
0.01
0.1
1
10
1E-06
1E-05
1E-04
1E-03
1E-02
Avalanche time, tp (s)
Non-repetitive Avalanche current, IAS (A)
125 C
VDS
ID
tp
Tj prior to avalanche = 25 C
-100
-50
0
50
100
150
0.85
0.9
0.95
1
1.05
1.1
1.15
Tj, Junction temperature (C)
Normalised Drain-source breakdown voltage
V(BR)DSS @ Tj
V(BR)DSS @ 25 C
PHP2N50E
0.001
0.01
0.1
1
10
1E-06
1E-05
1E-04
1E-03
1E-02
Avalanche time, tp (s)
Maximum Repetitive Avalanche Current, IAR (A)
125 C
Tj prior to avalanche = 25 C
December 1998
6
Rev 1.200
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|---|---|
| PHP2N50E | PowerMOS transistors Avalanche energy rated |
| PHD2N50E | PowerMOS transistors Avalanche energy rated |
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