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參數(shù)資料
| 型號(hào)： | PHB2N50 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | JFETs |
| 英文描述： | PowerMOS transistor |
| 中文描述： | 2 A, 500 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大?。?/td> | 59K |
| 代理商： | PHB2N50 |
Philips Semiconductors
Product specification
PowerMOS transistor
PHB2N50
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel
field-effect power transistor in a
plastic envelope suitable for surface
mounting featuring high avalanche
energy capability, stable off-state
characteristics, fast switching and
high thermal cycling performance
withlowthermalresistance.Intended
for use in Switched Mode Power
Supplies
(SMPS),
circuits
and
general
switching applications.
enhancement
mode
SYMBOL
PARAMETER
MAX.
UNIT
V
DS
I
D
P
tot
R
DS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Drain-source on-state resistance
500
2
50
5
V
A
W
motor
control
purpose
PINNING - SOT404
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
mb
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
I
D
Continuous drain current
CONDITIONS
T
mb
= 25 C; V
GS
= 10 V
T
mb
= 100 C; V
GS
= 10 V
T
mb
= 25 C
T
mb
= 25 C
T
mb
> 25 C
MIN.
-
-
-
-
-
-
-
MAX.
2
1.3
8
50
0.4
±
30
100
UNIT
A
A
A
W
W/K
V
mJ
I
DM
P
D
P
D
/
T
mb
Linear derating factor
V
GS
Gate-source voltage
E
AS
Single pulse avalanche
energy
I
AS
Peak avalanche current
Pulsed drain current
Total dissipation
V
DD
≤
50 V; starting T
j
= 25C; R
GS
= 50
;
V
GS
= 10 V
V
DD
≤
50 V; starting T
j
= 25C; R
GS
= 50
;
V
GS
= 10 V
-
2
A
T
j
, T
stg
Operating junction and
storage temperature range
- 55
150
C
THERMAL RESISTANCES
SYMBOL
R
th j-mb
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
TYP.
-
MAX.
2.5
UNIT
K/W
R
th j-a
pcb mounted, minimum
footprint
50
-
K/W
1
3
mb
2
d
g
s
June 1997
1
Rev 1.000
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