參數資料
型號: PHK24NQ04LT
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: TrenchMOS logic level FET
中文描述: 21200 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012
封裝: PLASTIC, SO-8
文件頁數: 4/12頁
文件大?。?/td> 240K
代理商: PHK24NQ04LT
Philips Semiconductors
PHK24NQ04LT
TrenchMOS logic level FET
Product data
Rev. 01 — 12 September 2003
4 of 12
9397 750 11709
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
4.
Thermal characteristics
4.1 Transient thermal impedance
Table 3:
Symbol Parameter
R
th(j-sp)
thermal resistance from junction to solder point
Figure 4
Thermal characteristics
Conditions
Min Typ Max Unit
-
-
20
K/W
Fig 4.
Transient thermal impedance from junction to solder point as a function of pulse duration.
03aj98
10-1
1
10
102
10-4
10-3
10-2
10-1
1
10
102
tp (s)
Zth(j-sp)
(K/W)
single pulse
δ
= 0.5
0.2
0.1
0.05
0.02
tp
tp
T
T
P
t
δ
=
相關PDF資料
PDF描述
PHK4NQ10T N-channel TrenchMOS transistor
PHK5NQ10T N-channel TrenchMOS transistor
PHL2143 Radar Pulsed Power Transistor, 3W, 2ms Pulse, 20% Duty 1.2 - 1.4 GHz
PHL516-10 Wireless Bipolar Power Transistor, 1OW 1.45 - 1.60 GHz
PHM004 Amplifier. Other
相關代理商/技術參數
參數描述
PHK24NQ04LT /T3 功能描述:MOSFET TAPE13 MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHK24NQ04LT,518 功能描述:MOSFET MOSFET N-CH 40V 21.2A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHK24NQ04LT 制造商:NXP Semiconductors 功能描述:MOSFET N SO-8
PHK28NQ03LT 制造商:NXP Semiconductors 功能描述:MOSFET N SO-8 制造商:NXP Semiconductors 功能描述:MOSFET, N, SO-8
PHK28NQ03LT /T3 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube