參數(shù)資料
型號: PHP36N03LT
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: N-channel TrenchMOS logic level FET
中文描述: 43.4 A, 30 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: PLASTIC, SC-46, 3 PIN
文件頁數(shù): 8/13頁
文件大?。?/td> 89K
代理商: PHP36N03LT
PHD_PHP36N03LT_2
Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 02 — 8 June 2006
8 of 13
Philips Semiconductors
PHD/PHP36N03LT
N-channel TrenchMOS logic level FET
T
j
= 25
°
C and 175
°
C; V
GS
= 0 V
Fig 13. Source current as a function of source-drain
voltage; typical values
V
GS
= 0 V; f = 1 MHz
Fig 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
V
SD
(V)
0
1.2
0.9
0.3
0.6
001aae815
20
10
30
40
I
S
(A)
0
T
j
= 25
°
C
175
°
C
V
DS
(V)
10
1
10
2
10
1
001aae816
10
3
10
2
10
4
C
(pF)
10
C
iss
C
oss
C
rss
相關(guān)PDF資料
PDF描述
PHD5N20E PowerMOS transistor
PHD83N03LT N-channel enhancement mode field-effect transistor
PHI214-20EL Radar Pulsed Power Transistor, 2OW, 2ms Pulse, 10% Duty 1.2 - 1.4 GHz
PHI214-25L Radar Pulsed Power Transistor, 25W, 300ms Pulse, 10% Duty 1.2 - 1.4 GHz
PHI214-25S Radar Pulsed Power Transistor, 25W, lms Pulse, 10% Duty 1.2 - 1.4 GHz
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PHP36N03LT,127 功能描述:MOSFET Trans MOSFET N-CH 30V 43.4A 3-Pin RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHP36N06E 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor
PHP37N06 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TrenchMOS transistor Logic level FET
PHP37N06LT 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TrenchMOS transistor Logic level FET
PHP37N06T 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TrenchMOS transistor Standard level FET