參數(shù)資料
型號(hào)： PHP36N03LT
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： N-channel TrenchMOS logic level FET
中文描述： 43.4 A, 30 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： PLASTIC, SC-46, 3 PIN
文件頁(yè)數(shù)： 2/13頁(yè)
文件大?。?/td> 89K
代理商： PHP36N03LT
PHD_PHP36N03LT_2
Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 02 — 8 June 2006
2 of 13
Philips Semiconductors
PHD/PHP36N03LT
N-channel TrenchMOS logic level FET
3.
Ordering information
4.
Limiting values
Table 2.
Type number
Ordering information
Package
Name
DPAK
Description
plastic single-ended surface-mounted package; 3 leads (one lead
cropped)
plastic single-ended package; heatsink mounted; 1 mounting hole;
3-lead TO-220AB
Version
SOT428
PHD36N03LT
PHP36N03LT
SC-46
SOT78
Table 3.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
drain-source voltage
V
DGR
drain-gate voltage (DC)
V
GS
gate-source voltage
I
D
drain current
Limiting values
Conditions
25
°
C
≤
T
j
≤
175
°
C
25
°
C
≤
T
j
≤
175
°
C; R
GS
= 20 k
Min
-
-
-
-
-
-
-
55
55
Max
30
30
±
20
43.4
30.7
173.6
57.6
+175
+175
Unit
V
V
V
A
A
A
W
°
C
°
C
T
mb
= 25
°
C; V
GS
= 10 V; see
Figure 2
and
3
T
mb
= 100
°
C; V
GS
= 10 V; see
Figure 2
T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s; see
Figure 3
T
mb
= 25
°
C; see
Figure 1
I
DM
P
tot
T
stg
T
j
Source-drain diode
I
S
source current
I
SM
peak source current
peak drain current
total power dissipation
storage temperature
junction temperature
T
mb
= 25
°
C
T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s
-
-
43.4
173.6
A
A
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參數(shù)描述
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