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參數(shù)資料
| 型號(hào)： | PHB64N03LT |
| 元件分類： | 基準(zhǔn)電壓源/電流源 |
| 英文描述： | RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS |
| 中文描述： | 抗輻射高效，5安培開關(guān)穩(wěn)壓器 |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 266K |
| 代理商： | PHB64N03LT |
Philips Semiconductors
PHB64N03LT
TrenchMOS logic level FET
Product data
Rev. 01 — 27 August 2002
3 of 12
9397 750 10026
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Fig 1.
Normalized total power dissipation as a
function of mounting base temperature.
Fig 2.
Normalized continuous drain current as a
function of mounting base temperature.
T
mb
= 25
°
C; I
DM
is single pulse.
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
03aa16
0
40
80
120
0
50
100
150
200
Tmb (
°
C)
Pder
(%)
03aa24
0
40
80
120
0
50
100
150
200
Tmb (
°
C)
Ider
(%)
P
der
P
tot 25 C
°
)
----------------------
100
%
×
=
I
der
I
D 25 C
°
)
------------------
100
%
×
=
03aj20
1
10
102
103
1
10
102
VDS (V)
ID
(A)
DC
100 ms
10 ms
Limit RDSon = VDS
/ ID
1 ms
tp = 10
μ
s
100
μ
s
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