參數(shù)資料
型號: PHB64N03LT
元件分類: 基準(zhǔn)電壓源/電流源
英文描述: RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS
中文描述: 抗輻射高效,5安培開關(guān)穩(wěn)壓器
文件頁數(shù): 6/12頁
文件大?。?/td> 266K
代理商: PHB64N03LT
Philips Semiconductors
PHB64N03LT
TrenchMOS logic level FET
Product data
Rev. 01 — 27 August 2002
6 of 12
9397 750 10026
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
T
j
= 25
°
C
Output characteristics: drain current as a
function of drain-source voltage; typical values.
T
j
= 25
°
C and 175
°
C; V
DS
> I
D
x R
DSon
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Fig 5.
T
j
= 25
°
C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03ae65
0
20
40
60
0
0.5
1
1.5
2
VDS (V)
ID
(A)
3 V
5 V
Tj = 25
°
C
VGS = 2.5 V
10 V
3.5 V
4 V
4.5 V
03ae67
0
20
40
60
0
1
2
3
4
5
VGS (V)
ID
(A)
VDS > ID x RDSon
Tj = 25
°
C
175
°
C
03ae66
0
0.01
0.02
0.03
0
20
40
60
ID (A)
RDSon
(
)
4.5 V
VGS = 4 V
Tj = 25
°
C
5V
10 V
03ad57
0
0.5
1
1.5
2
-60
0
60
120
180
Tj (
°
C)
a
a
R
DSon 25 C
°
)
---------------------------
=
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