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參數(shù)資料
| 型號： | PH955L |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | Circular Connector; No. of Contacts:16; Series:; Body Material:Aluminum Alloy; Connecting Termination:Solder; Connector Shell Size:20; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle |
| 中文描述： | 62.5 A, 55 V, 0.0083 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235 |
| 封裝： | PLASTIC, LFPAK-4 |
| 文件頁數(shù)： | 7/12頁 |
| 文件大?。?/td> | 87K |
| 代理商： | PH955L |
9397 750 14557
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 1 March 2005
7 of 12
Philips Semiconductors
PH955L
N-channel TrenchMOS logic level FET
I
D
= 1 mA; V
DS
= V
GS
Gate-source threshold voltage as a function of
junction temperature
T
j
= 25
°
C; V
DS
= 5 V
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
Fig 9.
I
D
= 25 A; V
DD
= 12 V and 44 V
Fig 11. Gate-source voltage as a function of gate
charge; typical values
Fig 12. Gate charge waveform definitions
03aa33
0
0.5
1
1.5
2
2.5
-60
0
60
120
180
T
j
(
°
C)
V
GS(th)
(V)
max
typ
min
03aa36
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
I
D
(A)
0
1
2
3
V
GS
(V)
max
typ
min
003aaa784
0
2
4
6
8
10
0
20
40
60
80
Q
G
(nC)
V
GS
(V)
44 V
V
DD
= 12 V
003aaa508
V
GS
V
GS(th)
Q
gs1
Q
gs2
Q
gd
V
DS
Q
g(tot)
I
D
Q
gs
V
plat
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PH955L T/R | 功能描述:MOSFET TRENCH-3 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PH955L,115 | 功能描述:MOSFET TRENCH-3 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PH965C6 | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:SPECIFICATION |
| PH965C6SC | 制造商:Fuji Electric 功能描述: |
| PH9676C6 | 制造商:Fuji Electric 功能描述:Diode, Si, VF=5V, IO=10A, VRRM=600V, trr=30 ns, TO-247 |
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