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參數(shù)資料
| 型號(hào)： | PH955L |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | Circular Connector; No. of Contacts:16; Series:; Body Material:Aluminum Alloy; Connecting Termination:Solder; Connector Shell Size:20; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle |
| 中文描述： | 62.5 A, 55 V, 0.0083 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235 |
| 封裝： | PLASTIC, LFPAK-4 |
| 文件頁(yè)數(shù)： | 2/12頁(yè) |
| 文件大小： | 87K |
| 代理商： | PH955L |
9397 750 14557
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 1 March 2005
2 of 12
Philips Semiconductors
PH955L
N-channel TrenchMOS logic level FET
3.
Ordering information
4.
Limiting values
[1]
Duty cycle is limited by the maximum junction temperature.
[2]
Repetitive avalanche failure is not determined simply by thermal effects. Repetitive avalanche transients should only be applied for short
bursts, not every switching cycle.
Table 2:
Type number
Ordering information
Package
Name
LFPAK
Description
plastic single-ended surface mounted package; 4 leads
Version
SOT669
PH955L
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
drain-source voltage (DC)
V
DGR
drain-gate voltage (DC)
V
GS
gate-source voltage
I
D
drain current (DC)
Limiting values
Conditions
25
°
C
≤
T
j
≤
150
°
C
25
°
C
≤
T
j
≤
150
°
C; R
GS
= 20 k
Min
-
-
-
-
-
-
-
55
55
Max
55
55
±
20
62.5
43.7
187
62.5
+150
+150
Unit
V
V
V
A
A
A
W
°
C
°
C
T
mb
= 25
°
C; V
GS
= 5 V;
Figure 2
and
Figure 3
T
mb
= 100
°
C; V
GS
= 5 V;
Figure 2
T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s;
Figure 3
T
mb
= 25
°
C;
Figure 1
I
DM
P
tot
T
stg
T
j
Source-drain diode
I
S
source (diode forward) current (DC)
I
SM
peak source (diode forward) current T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
peak drain current
total power dissipation
storage temperature
junction temperature
T
mb
= 25
°
C
-
-
52
156
A
A
unclamped inductive load; I
D
= 44 A;
t
p
= 0.1 ms; V
DD
≤
55 V; R
GS
= 50
;
V
GS
= 5 V; starting at T
j
= 25
°
C
unclamped inductive load; I
D
= 4.4 A;
t
p
= 0.1 ms; V
DD
≤
55 V; R
GS
= 50
;
V
GS
= 5 V
-
195
mJ
E
DS(AL)R
repetitive drain-source avalanche
energy
[1]
[2]
-
2
mJ
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