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參數(shù)資料
| 型號(hào)： | PH955L |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | Circular Connector; No. of Contacts:16; Series:; Body Material:Aluminum Alloy; Connecting Termination:Solder; Connector Shell Size:20; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle |
| 中文描述： | 62.5 A, 55 V, 0.0083 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235 |
| 封裝： | PLASTIC, LFPAK-4 |
| 文件頁數(shù)： | 3/12頁 |
| 文件大小： | 87K |
| 代理商： | PH955L |
9397 750 14557
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 1 March 2005
3 of 12
Philips Semiconductors
PH955L
N-channel TrenchMOS logic level FET
Fig 1.
Normalized total power dissipation as a
function of mounting base temperature
Fig 2.
Normalized continuous drain current as a
function of mounting base temperature
T
mb
= 25
°
C; I
DM
is single pulse; V
GS
= 10 V
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
Fig 3.
03aa16
0
40
80
120
0
50
100
150
200
T
mb
(
°
C)
P
der
(%)
03aa24
0
40
80
120
0
50
100
150
200
T
mb
(
°
C)
I
der
(%)
P
der
P
tot 25 C
)
-----------------------
100
%
×
=
I
der
I
D 25 C
°
)
-------------------
100
%
×
=
003aaa777
10
-1
1
10
10
2
10
3
10
-1
1
10
10
2
V
DS
(V)
I
D
(A)
t
p
= 10 μs
DC
1 ms
100
μ
s
Limit R
DSon
= V
DS
/ I
D
10 ms
100 ms
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|---|---|
| PH955L T/R | 功能描述:MOSFET TRENCH-3 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PH955L,115 | 功能描述:MOSFET TRENCH-3 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PH965C6 | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:SPECIFICATION |
| PH965C6SC | 制造商:Fuji Electric 功能描述: |
| PH9676C6 | 制造商:Fuji Electric 功能描述:Diode, Si, VF=5V, IO=10A, VRRM=600V, trr=30 ns, TO-247 |
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