參數(shù)資料
型號(hào)： PHD36N03LT
廠商： NXP SEMICONDUCTORS
元件分類(lèi)： JFETs
英文描述： N-channel TrenchMOS logic level FET
中文描述： 43.4 A, 30 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封裝： PLASTIC, SC-63, DPAK-3
文件頁(yè)數(shù)： 2/13頁(yè)
文件大?。?/td> 89K
代理商： PHD36N03LT
PHD_PHP36N03LT_2
Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 02 — 8 June 2006
2 of 13
Philips Semiconductors
PHD/PHP36N03LT
N-channel TrenchMOS logic level FET
3.
Ordering information
4.
Limiting values
Table 2.
Type number
Ordering information
Package
Name
DPAK
Description
plastic single-ended surface-mounted package; 3 leads (one lead
cropped)
plastic single-ended package; heatsink mounted; 1 mounting hole;
3-lead TO-220AB
Version
SOT428
PHD36N03LT
PHP36N03LT
SC-46
SOT78
Table 3.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
drain-source voltage
V
DGR
drain-gate voltage (DC)
V
GS
gate-source voltage
I
D
drain current
Limiting values
Conditions
25
°
C
≤
T
j
≤
175
°
C
25
°
C
≤
T
j
≤
175
°
C; R
GS
= 20 k
Min
-
-
-
-
-
-
-
55
55
Max
30
30
±
20
43.4
30.7
173.6
57.6
+175
+175
Unit
V
V
V
A
A
A
W
°
C
°
C
T
mb
= 25
°
C; V
GS
= 10 V; see
Figure 2
and
3
T
mb
= 100
°
C; V
GS
= 10 V; see
Figure 2
T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s; see
Figure 3
T
mb
= 25
°
C; see
Figure 1
I
DM
P
tot
T
stg
T
j
Source-drain diode
I
S
source current
I
SM
peak source current
peak drain current
total power dissipation
storage temperature
junction temperature
T
mb
= 25
°
C
T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s
-
-
43.4
173.6
A
A
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PHD36N03LT /T3 功能描述:兩極晶體管 - BJT TAPE13 MOSFET RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
PHD36N03LT,118 功能描述:MOSFET TAPE13 MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHD36N03LT/T3 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 30V 43.4A 3-Pin(2+Tab) DPAK T/R
PHD37N06LT 制造商:NXP Semiconductors 功能描述:MOSFET N D-PAK
PHD37N06LT,118 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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