參數(shù)資料
型號(hào)： PHB222NQ04LT
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： N-channel TrenchMOSTM logic level FET
中文描述： 75 A, 40 V, 0.0035 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC, D2PAK-3
文件頁數(shù)： 2/13頁
文件大?。?/td> 93K
代理商： PHB222NQ04LT
Philips Semiconductors
PHP/PHB222NQ04LT
N-channel TrenchMOS logic level FET
Product data
Rev. 01 — 13 May 2004
2 of 13
9397 750 13156
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
3.
Ordering information
4.
Limiting values
Table 2:
Type number
Ordering information
Package
Name
TO-220AB
D
2
-PAK
Description
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3 leads
Plastic single-ended surface mounted package; 3 leads (one lead cropped) SOT404
Version
SOT78
PHP222NQ04LT
PHB222NQ04LT
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
drain-source voltage (DC)
V
DGR
drain-gate voltage (DC)
V
GS
gate-source voltage (DC)
I
D
drain current (DC)
Limiting values
Conditions
25
°
C
≤
T
j
≤
175
°
C
25
°
C
≤
T
j
≤
175
°
C; R
GS
= 20 k
Min
-
-
-
-
-
-
-
55
55
Max
40
40
±
15
75
75
240
300
+175
+175
Unit
V
V
V
A
A
A
W
°
C
°
C
T
mb
= 25
°
C; V
GS
= 10 V;
Figure 2
and
3
T
mb
= 100
°
C; V
GS
= 10 V;
Figure 2
T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s;
Figure 3
T
mb
= 25
°
C;
Figure 1
I
DM
P
tot
T
stg
T
j
Source-drain diode
I
S
source (diode forward) current (DC)
I
SM
peak source (diode forward) current T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
peak drain current
total power dissipation
storage temperature
junction temperature
T
mb
= 25
°
C
-
-
75
240
A
A
unclamped inductive load; I
D
= 75 A;
t
p
= 0.29 ms; V
DD
≤
40 V; R
GS
= 50
;
V
GS
= 10 V; starting T
j
= 25
°
C
-
560
mJ
相關(guān)PDF資料
PDF描述
PHP222NQ04LT N-channel TrenchMOSTM logic level FET
PHB2N50E PowerMOS transistors Avalanche energy rated
PHP2N50E PowerMOS transistors Avalanche energy rated
PHD2N50E PowerMOS transistors Avalanche energy rated
PHB2N50 PowerMOS transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PHB222NQ04LT,118 功能描述:MOSFET TRENCHMOS (TM) FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHB225NQ04T 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS standard level FET
PHB225NQ04T,118 功能描述:MOSFET TRENCHMOS (TM) FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHB23NQ10LT,118 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHB23NQ10T 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS transistor
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*