參數(shù)資料
型號(hào)： PHB10N40
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： CAP 470PF 200V 10% NP0(C0G) DIP-2 TUBE-PAK S-MIL-PRF-39014/22
中文描述： 10.7 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC PACKAGE-3
文件頁數(shù)： 2/7頁
文件大小： 69K
代理商： PHB10N40
Philips Semiconductors
Product specification
PowerMOS transistor
PHB10N40
ELECTRICAL CHARACTERISTICS
T
j
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
(BR)DSS
Drain-source breakdown
voltage
V
(BR)DSS
/
Drain-source breakdown
T
j
voltage temperature coefficient
R
DS(ON)
Drain-source on resistance
V
GS(TO)
Gate threshold voltage
g
fs
Forward transconductance
I
DSS
Drain-source leakage current
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA
MIN.
400
TYP.
-
MAX.
-
UNIT
V
V
DS
= V
GS
; I
D
= 0.25 mA
-
0.4
-
V/K
V
GS
= 10 V; I
= 6 A
V
DS
= V
; I
D
= 0.25 mA
V
DS
= 30 V; I
= 6 A
V
DS
= 400 V; V
GS
= 0 V
V
DS
= 320 V; V
GS
= 0 V; T
j
= 125 C
V
GS
=
±
30 V; V
DS
= 0 V
I
D
= 10 A; V
DD
= 320 V; V
GS
= 10 V
-
0.42
3.0
6.0
1
30
10
90
7
49
13
65
108
70
3.5
4.5
0.55
4.0
-
25
250
200
110
9
60
-
-
-
-
-
-
V
S
μ
A
μ
A
nA
nC
nC
nC
ns
ns
ns
ns
nH
nH
2.0
3.5
-
-
-
-
-
-
-
-
-
-
-
-
I
GSS
Q
g(tot)
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
d
L
d
Gate-source leakage current
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Internal drain inductance
V
DD
= 200 V; I
D
= 10 A;
R
G
= 9.1
; R
D
= 20
Measured from tab to centre of die
Measured from drain lead solder
point to centre of die
Measured from source lead solder
point to source bond pad
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
L
s
Internal source inductance
-
7.5
-
nH
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Feedback capacitance
-
-
-
1080
190
110
-
-
-
pF
pF
pF
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
T
j
= 25 C unless otherwise specified
SYMBOL
PARAMETER
I
S
Continuous source current
(body diode)
I
SM
Pulsed source current (body
diode)
V
SD
Diode forward voltage
t
rr
Reverse recovery time
CONDITIONS
T
mb
= 25C
MIN.
-
TYP.
-
MAX.
10.6
UNIT
A
T
mb
= 25C
-
-
43
A
I
S
= 10 A; V
GS
= 0 V
I
= 10 A; V
= 0 V;
dI/dt = 100 A/
μ
s
-
-
-
1.2
-
V
ns
330
Q
rr
Reverse recovery charge
-
4.8
-
μ
C
April 1997
2
Rev 1.000
相關(guān)PDF資料
PDF描述
PHB110NQ06LT N-channel TrenchMOS logic level FET
PHP110NQ06LT N-channel TrenchMOS logic level FET
PHB110NQ08LT N-channel TrenchMOS logic level FET
PHP110NQ08LT N-channel TrenchMOS logic level FET
PHB222NQ04LT N-channel TrenchMOSTM logic level FET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PHB10N40T/R 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 10.7A I(D) | SOT-404
PHB110NQ06LT 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS logic level FET
PHB110NQ06LT,118 功能描述:MOSFET N-CH TRENCH 55V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHB110NQ08LT 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS logic level FET
PHB110NQ08LT,118 功能描述:MOSFET TRENCH-75 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*