參數(shù)資料
型號(hào): PHB110NQ08LT
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: N-channel TrenchMOS logic level FET
中文描述: 75 A, 75 V, 0.00995 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: PLASTIC, D2PAK-3
文件頁數(shù): 1/13頁
文件大小: 91K
代理商: PHB110NQ08LT
PHP/PHB110NQ08LT
N-channel TrenchMOS logic level FET
Rev. 01 — 29 March 2004
Product data
1.
Product profile
1.1 Description
Logic level N-channel enhancement mode field-effect transistor in a plastic package
using TrenchMOS technology.
1.2 Features
1.3 Applications
1.4 Quick reference data
2.
Pinning information
[1]
It is not possible to make connection to pin 2 of the SOT404 package.
I
Logic level threshold
I
Very low on-state resistance.
I
Motors, lamps, solenoids
I
DC-to-DC converters
I
Uninterruptible power supplies
I
General industrial applications.
I
V
DS
75 V
I
P
tot
230 W
I
I
D
75 A
I
R
DSon
8.5 m
.
Table 1:
Pin
1
2
3
mb
Pinning - SOT78 (TO-220AB) and SOT404 (D
2
-PAK), simplified outline and symbol
Description
Simplified outline
gate (g)
drain (d)
source (s)
mounting base;
connected to
drain (d)
Symbol
SOT78 (TO-220AB)
SOT404 (D
2
-PAK)
[1]
MBK106
1 2
mb
3
1
3
2
MBK116
mb
s
d
g
MBB076
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PHB110NQ08LT,118 功能描述:MOSFET TRENCH-75 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHB110NQ08T 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS? standard level FET
PHB110NQ08T /T3 功能描述:MOSFET TRENCH-75 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHB110NQ08T,118 功能描述:MOSFET TRENCH-75 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PHB112N06T 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel enhancement mode field-effect transistor