參數(shù)資料
型號(hào): PHM12NQ20T
英文描述: 10-Bit, 500ksps ADCs in MSOP with Auto Shutdown; Package: SO; No of Pins: 8; Temperature Range: 0°C to +70°C
中文描述: TrenchMOS(TM)的標(biāo)準(zhǔn)水平場效應(yīng)管
文件頁數(shù): 6/12頁
文件大小: 236K
代理商: PHM12NQ20T
Philips Semiconductors
PHM12NQ20T
TrenchMOS standard level FET
Preliminary data
Rev. 01 — 30 January 2003
6 of 12
9397 750 10876
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
T
j
= 25
°
C
Output characteristics: drain current as a
function of drain-source voltage; typical values.
T
j
= 25
°
C and 150
°
C; V
DS
>
I
D
×
R
DSon
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Fig 5.
T
j
= 25
°
C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
003aaa236
0
1
2
3
4
0
0.5
1
1.5
2
VDS (V)
(A)
3.8 V
10 V
4 V
4.5 V
ID
VGS = 3.6 V
003aaa237
0
2
4
6
8
0
1
2
3
4
5
(A)
ID
VGS (V)
Tj = 150
°
C
25
°
C
003aaa238
0
100
200
300
400
0
2
4
6
8
3.8 V
(m
)
RDSon
ID (A)
VGS = 4 V
4.5 V
5 V
10 V
03al52
0
1
2
3
-60
0
60
120
180
Tj (
°
C)
a
a
R
DSon 25 C
)
----------------------------
=
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