參數(shù)資料
型號(hào): PHN103S
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 25V V(BR)DSS | 6A I(D) | SO
中文描述: 晶體管| MOSFET的| N溝道| 25V的五(巴西)直| 6A條(丁)|蘇
文件頁數(shù): 1/8頁
文件大?。?/td> 94K
代理商: PHN103S
Philips Semiconductors
Product specification
N-channel TrenchMOS
TM
transistor & schottky diode
PHN103S
FEATURES
SYMBOL
QUICK REFERENCE DATA
MOSFET + Schottky diode in the
same package
Low threshold voltage
Extremely fast switching
Logic level compatible
Surface mount package
V
DS
= 25 V
I
D
= 5.8 A
R
DS(ON)
35 m
(V
GS
= 10 V)
R
DS(ON)
60 m
(V
GS
= 4.5 V)
V
F
(schottky) < 0.55 V
GENERAL DESCRIPTION
PINNING
SOT96-1
N-channel
field-effect transistor and schottky
diode in the same plastic envelope.
The
MOSFET
technology to achieve low on-state
resistance.
enhancement
mode
PIN
DESCRIPTION
1,2
anode (a)
uses
trench
3
source (s)
4
gate (g)
Applications:-
d.c. to d.c. converters
motor drivers
relay and actuator drivers
5,6
drain (d)
7,8
cathode (k)
The PHN103S is supplied in the
SOT96-1 (SO8) surface mounting
package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
V
DS
PARAMETER
Repetitive peak drain-source
voltage
Continuous drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current
1
CONDITIONS
T
j
= 25 C to 150C
MIN.
-
MAX.
25
UNIT
V
V
DS
V
DGR
V
GS
I
D
-
-
-
-
-
-
-
-
25
25
±
20
5.8
4.6
23
2
1.3
150
V
V
V
A
A
A
W
W
C
R
GS
= 20 k
T
a
= 25 C
T
a
= 70 C
T
a
= 25 C
T
a
= 25 C
T
a
= 70 C
I
DM
P
tot
Drain current (pulse peak value)
Total power dissipation
T
stg
, T
j
Storage & operating temperature
- 65
d
g
s
a
k
1
2
3
4
5
6
7
8
pin 1 index
1
Surface mounted on FR4 board, t
10 sec
September 1999
1
Rev 1.000
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