- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370000 > PHN103T 10-Bit, 500ksps ADCs in MSOP with Auto Shutdown; Package: MSOP; No of Pins: 8; Temperature Range: 0°C to +70°C PDF資料下載
參數(shù)資料
| 型號(hào)： | PHN103T |
| 英文描述： | 10-Bit, 500ksps ADCs in MSOP with Auto Shutdown; Package: MSOP; No of Pins: 8; Temperature Range: 0°C to +70°C |
| 中文描述： | 晶體管| MOSFET的| N溝道| 30V的五（巴西）直| 8.6AI（四）|蘇 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 94K |
| 代理商： | PHN103T |
Philips Semiconductors
Product specification
N-channel TrenchMOS
TM
transistor & schottky diode
PHN103S
FEATURES
SYMBOL
QUICK REFERENCE DATA
MOSFET + Schottky diode in the
same package
Low threshold voltage
Extremely fast switching
Logic level compatible
Surface mount package
V
DS
= 25 V
I
D
= 5.8 A
R
DS(ON)
≤
35 m
(V
GS
= 10 V)
R
DS(ON)
≤
60 m
(V
GS
= 4.5 V)
V
F
(schottky) < 0.55 V
GENERAL DESCRIPTION
PINNING
SOT96-1
N-channel
field-effect transistor and schottky
diode in the same plastic envelope.
The
MOSFET
technology to achieve low on-state
resistance.
enhancement
mode
PIN
DESCRIPTION
1,2
anode (a)
uses
’
trench
’
3
source (s)
4
gate (g)
Applications:-
d.c. to d.c. converters
motor drivers
relay and actuator drivers
5,6
drain (d)
7,8
cathode (k)
The PHN103S is supplied in the
SOT96-1 (SO8) surface mounting
package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
V
DS
PARAMETER
Repetitive peak drain-source
voltage
Continuous drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current
1
CONDITIONS
T
j
= 25 C to 150C
MIN.
-
MAX.
25
UNIT
V
V
DS
V
DGR
V
GS
I
D
-
-
-
-
-
-
-
-
25
25
±
20
5.8
4.6
23
2
1.3
150
V
V
V
A
A
A
W
W
C
R
GS
= 20 k
T
a
= 25 C
T
a
= 70 C
T
a
= 25 C
T
a
= 25 C
T
a
= 70 C
I
DM
P
tot
Drain current (pulse peak value)
Total power dissipation
T
stg
, T
j
Storage & operating temperature
- 65
d
g
s
a
k
1
2
3
4
5
6
7
8
pin 1 index
1
Surface mounted on FR4 board, t
≤
10 sec
September 1999
1
Rev 1.000
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PHN210T | TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 27V V(BR)DSS | 3.4A I(D) | SO |
| PHN210 | Dual N-channel enhancement mode TrenchMOS transistor |
| PHN220 | TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 55V V(BR)DSS | 2.6A I(D) | SO |
| PHN405 | 4 N-channel 60 mohm FET array enhancement mode MOS transistors |
| PHN708 | 7 N-channel 80 mohm FET array enhancement mode MOS transistors |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PHN103T/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | SO |
| PHN110 | 制造商:NXP Semiconductors 功能描述:MOSFET N SO-8 |
| PHN110T/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 4A I(D) | SO |
| PHN15-4.1 | 制造商:Power-One 功能描述: |
| PHN203 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Dual N-channel TrenchMOS logic level FET |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。