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參數(shù)資料
| 型號(hào)： | PHN103T |
| 英文描述： | 10-Bit, 500ksps ADCs in MSOP with Auto Shutdown; Package: MSOP; No of Pins: 8; Temperature Range: 0°C to +70°C |
| 中文描述： | 晶體管| MOSFET的| N溝道| 30V的五（巴西）直| 8.6AI（四）|蘇 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大小： | 94K |
| 代理商： | PHN103T |
Philips Semiconductors
Product specification
N-channel TrenchMOS
TM
transistor & schottky diode
PHN103S
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-a
MOSFET or schottky diode
thermal resistance junction
to ambient
R
th j-a
MOSFET or schottky diode
thermal resistance junction
to ambient
CONDITIONS
Surface mounted, FR4 board, t
≤
10 sec
TYP.
-
MAX.
62.5
UNIT
K/W
Surface mounted, FR4 board
150
-
K/W
ELECTRICAL CHARACTERISTICS
T
j
= 25C unless otherwise specified
SYMBOL PARAMETER
V
(BR)DSS
Drain-source breakdown
voltage
V
GS(TO)
Gate threshold voltage
CONDITIONS
V
GS
= 0 V; I
D
= 10
μ
A;
MIN.
25
22
1
0.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
-
-
-
-
2.1
-
-
-
-
3.2
30
35
50
60
50
60
10
100
0.05
10
1
100
17
-
2.9
-
4.1
-
8
-
11
-
31
-
17
-
2.5
-
5
-
V
V
V
V
V
T
j
= -55C
V
DS
= V
GS
; I
D
= 1 mA
T
j
= 150C
T
j
= -55C
R
DS(ON)
Drain-source on-state
resistance
V
GS
= 10 V; I
D
= 5 A
V
GS
= 4.5 V; I
D
= 2.5 A
V
GS
= 10 V; I
= 5 A; T
j
= 150C
m
m
m
nA
μ
A
μ
A
nC
nC
nC
ns
ns
ns
ns
nH
nH
I
GSS
I
DSS
Gate source leakage current V
GS
=
±
20 V; V
DS
= 0 V
Zero gate voltage drain
current
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Internal source inductance
V
DS
= 25 V; V
GS
= 0 V;
T
j
= 150C
Q
g(tot)
Q
gs
Q
gd
t
d on
t
r
t
d off
t
f
L
d
L
s
I
D
= 6 A; V
DD
= 15 V; V
GS
= 10 V
V
DD
= 20 V; R
D
= 18
;
V
= 10 V; R
G
= 6
Resistive load
Measured from drain lead to centre of die
Measured from source lead to source
bond pad
V
GS
= 0 V; V
DS
= 20 V; f = 1 MHz
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Feedback capacitance
-
-
-
650
320
130
-
-
-
pF
pF
pF
SOURCE-DRAIN DIODE LIMITING VALUES AND CHARACTERISTICS
T
j
= 25C, per MOSFET unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
I
S
Continuous source diode
T
a
= 25 C
current
I
SM
Pulsed source diode current
V
SD
Diode forward voltage
I
F
= 1.25 A; V
GS
= 0 V
t
rr
Reverse recovery time
I
F
= 1.25 A; -dI
/dt = 100 A/
μ
s;
Q
rr
Reverse recovery charge
V
GS
= 0 V; V
R
= 25 V
MIN.
-
TYP. MAX. UNIT
-
2
A
-
-
-
-
-
23
1
-
-
A
V
ns
nC
0.75
35
24
September 1999
2
Rev 1.000
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|---|---|
| PHN103T/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | SO |
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| PHN110T/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 4A I(D) | SO |
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| PHN203 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Dual N-channel TrenchMOS logic level FET |
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