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參數(shù)資料
| 型號： | PHN103S |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 25V V(BR)DSS | 6A I(D) | SO |
| 中文描述： | 晶體管| MOSFET的| N溝道| 25V的五（巴西）直| 6A條（丁）|蘇 |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 94K |
| 代理商： | PHN103S |
Philips Semiconductors
Product specification
N-channel TrenchMOS
TM
transistor & schottky diode
PHN103S
Fig.11. Gate threshold voltage.
V
GS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= V
GS
Fig.12. Sub-threshold drain current.
I
D
= f(V
GS)
; conditions: T
j
= 25 C
Fig.13. Typical capacitances, C
, C
, C
.
C = f(V
DS
); conditions: V
GS
= 0 V; f = 1 MHz
Fig.14. Typical turn-on gate-charge characteristics.
V
GS
= f(Q
G
)
Fig.15. MOSFET source-drain diode characteristics
I
F
= f(V
SDS
); conditions: V
GS
= 0 V; parameter T
j
Fig.16. Schottky diode characteristics
I
F
= f(V
F
); parameter T
j
-100
-50
0
50
100
150
200
0
1
2
3
4
5
Tj / C
VGS(TO) / V
typ.
min.
PHN1013
0
1
2
3
4
5
6
7
8
9
10
11
13
15
0
5
10
15
20
25
Gate charge, QG (nC)
Gate-source voltage, VGS (V)
ID = 6 A
Tj = 25 C
VDD = 15 V
0
1
2
3
4
5
1uA
10uA
100uA
1mA
10mA
100mA
Sub-Threshold Conduction
typ
min
Drain current, ID (A)
Gate-source voltage, VGS (V)
Tj = 25 C
VDS = VGS
0
1
2
3
4
5
6
7
8
9
10
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
Drain-Source Voltage, VSDS (V)
Source-Drain Diode Current, IF (A)
Tj = 25 C
150 C
VGS = 0 V
100
1000
10000
0.1
1
10
100
Drain-Source Voltage, VDS (V)
Capacitances, Ciss, Coss, Crss (pF)
Ciss
Coss
Crss
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Schottky Forward Voltage,VF (V)
Schottky Forward Current,IF(A)
Tj = 25 C
150 C
September 1999
5
Rev 1.000
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