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參數資料
| 型號： | PHM15NQ20T |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | TrenchMOS standard level FET |
| 中文描述： | 17.5 A, 200 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, QLPAK, HVSON-8 |
| 文件頁數： | 2/13頁 |
| 文件大小： | 283K |
| 代理商： | PHM15NQ20T |
Philips Semiconductors
PHM15NQ20T
TrenchMOS standard level FET
Product data
Rev. 03 — 11 September 2003
2 of 13
9397 750 11845
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
3.
Ordering information
4.
Limiting values
[1]
[2]
Duty cycle limited by maximum junction temperature.
Repetitive avalanche failure is not determined simply by thermal effects. Repetitive avalanche transients should only be applied for short
bursts, not every switching cycle.
Table 2:
Type number
Ordering information
Package
Name
QLPAK
Description
Plastic surface mounted package; no leads; 8 terminals.
Version
SOT685
PHM15NQ20T
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
drain-source voltage (DC)
V
DGR
drain-gate voltage (DC)
V
GS
gate-source voltage (DC)
I
D
drain current (DC)
Limiting values
Conditions
25
°
C
≤
T
j
≤
150
°
C
25
°
C
≤
T
j
≤
150
°
C; R
GS
= 20 k
Min
-
-
-
-
-
-
-
55
55
Max
200
200
±
20
17.5
11
60
62.5
+150
+150
Unit
V
V
V
A
A
A
W
°
C
°
C
T
mb
= 25
°
C; V
GS
= 10 V;
Figure 2
and
3
T
mb
= 100
°
C; V
GS
= 10 V;
Figure 2
T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s;
Figure 3
T
mb
= 25
°
C
I
DM
P
tot
T
stg
T
j
Source-drain diode
I
S
source (diode forward) current (DC)
I
SM
peak source (diode forward) current T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
peak drain current
total power dissipation
storage temperature
junction temperature
T
mb
= 25
°
C
-
-
17.5
60
A
A
unclamped inductive load; I
D
= 11 A;
t
p
= 0.14 ms; V
DD
≤
200 V; R
GS
= 50
;
V
GS
= 10 V; starting T
j
= 25
°
C
unclamped inductive load;
I
D
= 1.1 A; t
p
= 0.014 ms; V
DD
≤
200 V;
R
GS
= 50
; V
GS
= 10 V
-
210
mJ
E
DS(AL)R
repetitive drain-source avalanche
energy
[1]
[2]
-
2.1
mJ
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| PHM15NQ20T,518 | 功能描述:MOSFET N-CH 200V 17.5A SOT685-1 RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:TrenchMOS™ 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
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