參數(shù)資料
型號： PHK4NQ10T
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： N-channel TrenchMOS transistor
中文描述： 4 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁數(shù)： 2/7頁
文件大?。?/td> 84K
代理商： PHK4NQ10T
Philips Semiconductors
Product specification
N-channel TrenchMOS
TM
transistor
PHK4NQ10T
ELECTRICAL CHARACTERISTICS
T
j
= 25C unless otherwise specified
SYMBOL PARAMETER
V
(BR)DSS
Drain-source breakdown
voltage
V
GS(TO)
Gate threshold voltage
CONDITIONS
V
GS
= 0 V; I
D
= 10
μ
A;
MIN.
100
89
2
1.1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
-
-
-
-
3
4
-
-
6
65
70
-
168
10
100
0.05
10
5
100
22
-
4
-
8
-
6
-
13
-
26
-
12
-
1
-
3
-
V
V
V
V
V
T
j
= -55C
V
DS
= V
GS
; I
D
= 1 mA
T
j
= 150C
T
j
= -55C
R
DS(ON)
Drain-source on-state
resistance
Gate source leakage current V
GS
=
±
20 V; V
DS
= 0 V
Zero gate voltage drain
current
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Internal source inductance
V
GS
= 10 V; I
D
= 4 A
m
m
nA
μ
A
μ
A
nC
nC
nC
ns
ns
ns
ns
nH
nH
T
j
= 150C
I
GSS
I
DSS
V
DS
= 100 V; V
GS
= 0 V;
T
j
= 150C
Q
g(tot)
Q
gs
Q
gd
t
d on
t
r
t
d off
t
f
L
d
L
s
I
D
= 4 A; V
DD
= 80 V; V
GS
= 10 V
V
DD
= 50 V; R
D
= 12
;
V
= 10 V; R
G
= 5.6
Resistive load
Measured from drain lead to centre of die
Measured from source lead to source
bond pad
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Feedback capacitance
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
-
-
-
880
137
84
-
-
-
pF
pF
pF
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j
= 25C unless otherwise specified
SYMBOL PARAMETER
I
S
Continuous source current
(body diode)
I
SM
Pulsed source current (body
diode)
V
SD
Diode forward voltage
t
rr
Reverse recovery time
Q
rr
Reverse recovery charge
CONDITIONS
T
a
= 25 C, t
p
≤
10 s
MIN.
-
TYP. MAX. UNIT
-
2.3
A
-
-
15
A
I
F
= 4 A; V
GS
= 0 V
I
F
= 4 A; -dI
F
/dt = 100 A/
μ
s;
V
GS
= 0 V; V
R
= 25 V
-
-
-
0.82
60
120
1.2
-
-
V
ns
nC
August 1999
2
Rev 1.000
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PHK4NQ20T 制造商:NXP Semiconductors 功能描述:MOSFET N SO-8
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