參數(shù)資料
型號: PHB95N03LTA
英文描述: 3.3V Dual Micropower High-Side/Low-Side MOSFET Driver; Package: SO; No of Pins: 8; Temperature Range: 0°C to +70°C
中文描述: 晶體管| MOSFET的| N溝道| 22V的五(巴西)直| 75A條(?。﹟對263AB
文件頁數(shù): 6/12頁
文件大?。?/td> 258K
代理商: PHB95N03LTA
Philips Semiconductors
PHB95N03LTA
TrenchMOS logic level FET
Product data
Rev. 01 — 27 August 2002
6 of 12
9397 750 10027
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
T
j
= 25
°
C
Output characteristics: drain current as a
function of drain-source voltage; typical values.
T
j
= 25
°
C and 175
°
C; V
DS
> I
D
x R
DSon
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Fig 5.
T
j
= 25
°
C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03ad78
0
20
40
60
80
0
0.5
1
1.5
2
VDS (V)
ID
(A)
3 V
5 V
Tj = 25
°
C
VGS = 2.5 V
10 V
3.5 V
03ad80
0
20
40
60
80
0
1
2
3
4
VGS (V)
ID
(A)
VDS > ID x RDSon
Tj = 25
°
C
175
°
C
03ad79
0
0.01
0.02
0.03
0.04
0.05
0
20
40
60
80
ID (A)
RDSon
(
)
2.5 V
VGS = 3 V
Tj = 25
°
C
5V
10 V
3.5 V
03ad57
0
0.5
1
1.5
2
-60
0
60
120
180
Tj (
°
C)
a
a
R
DSon 25 C
°
)
---------------------------
=
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