參數(shù)資料
型號: ARM966E-S
英文描述: ARM966E-S Microprocessor Core preliminary technical manual 6/01
中文描述: ARM966E - ?微處理器核的初步技術(shù)手冊6月1日
文件頁數(shù): 98/166頁
文件大?。?/td> 1145K
代理商: ARM966E-S
8-2
Tightly Coupled RAM
Rev. A
Copyright 1999-2001 by LSI Logic Corporation. All rights reserved.
routed both to the instruction and data interfaces of the core. See
Figure 1.1 on page 1-3 for details of this data and address multiplexing.
The ARM966E-S supports the use of synchronous SRAM. The SRAM
control has been implemented in a way that expects the compiled SRAM
memory cells to return read data to the ARM966E-S in a single cycle.
This requirement applies to both the I-SRAM and D-SRAM. See
Figure 8.1 for a typical read cycle (I-SRAM shown).
Figure 8.1
SRAM Read Cycle
During normal program execution, the instruction and data interfaces of
the ARM966E-S can be active simultaneously. In this case, both SRAMs
can be simultaneously accessed allowing the core to continue execution
without any stall cycles. There are cases, however, where stall cycles are
encountered when accessing the SRAM.
8.3 Enabling the SRAM
There are two mechanisms for controlling the SRAM enable:
both I-SRAM and D-SRAM can be enabled or disabled during reset
by the input INITRAM
the I-SRAM and D-SRAM can be individually enabled or disabled
through software MCR instructions to CP15.
8.3.1 Using INITRAM to Enable SRAM
Two resets are described in the following subsections, depending on the
state of the INITRAM input.
CLK
InMREQ
IA[31:1]
INSTR[31:0]
SRAM
Access Time
Addr A
INSTR (A)
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