型號 | 廠商 | 描述 |
ndt014(j23z) 2 3 4 5 6 7 8 9 10 |
Fairchild Semiconductor Corporation | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 2.7A I(D) | SOT-223 |
ndt2955 2 3 4 5 6 |
FAIRCHILD SEMICONDUCTOR CORP | P-Channel Enhancement Mode Field Effect Transistor(-2.5A,-60V,0.3Ω)(P溝道增強(qiáng)型場效應(yīng)管(漏電流-2.5A, 漏源電壓-60V,導(dǎo)通電阻0.3Ω)) |
ndt2955(j23z) 2 3 4 5 6 |
Fairchild Semiconductor Corporation | TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 2.5A I(D) | SOT-223 |
ndt3055l 2 3 4 5 6 7 8 |
FAIRCHILD SEMICONDUCTOR CORP | N-Channel Logic Level Enhancement Mode Field Effect Transistor(4A,60V,0.1Ω)(N溝道邏輯增強(qiáng)型場效應(yīng)管(漏電流4A, 漏源電壓60V,導(dǎo)通電阻0.1Ω)) |
ndt3055 2 3 4 5 6 7 8 |
FAIRCHILD SEMICONDUCTOR CORP | N-Channel Enhancement Mode Field Effect Transistor(4A,60V,0.1Ω)(N溝道增強(qiáng)型場效應(yīng)管(漏電流4A, 漏源電壓60V,導(dǎo)通電阻0.1Ω)) |
ndt410el 2 3 4 5 6 7 8 9 10 |
FAIRCHILD SEMICONDUCTOR CORP | N-Channel Logic Level Enhancement Mode Field Effect Transistor(2.1A,100V,0.25Ω)(N溝道邏輯增強(qiáng)型場效應(yīng)管(漏電流2.1A, 漏源電壓100V,導(dǎo)通電阻0.25Ω)) |
ndt410el(j23z) 2 3 4 5 6 7 8 9 10 |
Fairchild Semiconductor Corporation | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 2.1A I(D) | SOT-223 |
ndt451an 2 3 4 5 6 7 8 9 10 |
FAIRCHILD SEMICONDUCTOR CORP | N-Channel Enhancement Mode Field Effect Transistor(7.2A,30V,0.035Ω)(N溝道增強(qiáng)型場效應(yīng)管(漏電流7.2A, 漏源電壓30V,導(dǎo)通電阻0.035Ω)) |
ndt451n 2 3 4 5 6 7 8 9 10 |
FAIRCHILD SEMICONDUCTOR CORP | N-Channel Enhancement Mode Field Effect Transistor(5.5A,30V,0.05Ω)(N溝道增強(qiáng)型場效應(yīng)管(漏電流5.5A, 漏源電壓30V,導(dǎo)通電阻0.05Ω)) |
ndt451 2 3 4 5 6 7 8 9 10 |
Fairchild Semiconductor Corporation | N-Channel Enhancement Mode Field Effect Transistor |
ndt451an(j23z) 2 3 4 5 6 7 8 9 10 |
Fairchild Semiconductor Corporation | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 7.2A I(D) | SOT-223 |
ndt452p 2 3 4 5 6 7 8 9 10 |
FAIRCHILD SEMICONDUCTOR CORP | P-Channel Enhancement Mode Field Effect Transistor(-3A,-30V,0.18Ω)(P溝道增強(qiáng)型場效應(yīng)管(漏電流-3A, 漏源電壓-30V,導(dǎo)通電阻0.18Ω)) |
ndt452 2 3 4 5 6 |
Fairchild Semiconductor Corporation | P-Channel Enhancement Mode Field Effect Transistor |
ndt452ap(j23z) 2 3 4 5 6 |
Fairchild Semiconductor Corporation | TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 5A I(D) | SOT-223 |
ndt452ap 2 3 4 5 6 |
FAIRCHILD SEMICONDUCTOR CORP | P-Channel Enhancement Mode Field Effect Transistor(-5A,-30V,0.065Ω)(P溝道增強(qiáng)型場效應(yīng)管(漏電流-5A, 漏源電壓-30V,導(dǎo)通電阻0.065Ω)) |
ndt453n(j23z) 2 3 4 5 6 7 8 9 10 |
Fairchild Semiconductor Corporation | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 8A I(D) | SOT-223 |
ndt453n 2 3 4 5 6 7 8 9 10 |
FAIRCHILD SEMICONDUCTOR CORP | N-Channel Enhancement Mode Field Effect Transistor(8A,30V,0.028Ω)(N溝道增強(qiáng)型場效應(yīng)管(漏電流8A, 漏源電壓30V,導(dǎo)通電阻0.028Ω)) |
ndt454p 2 3 4 5 6 |
FAIRCHILD SEMICONDUCTOR CORP | P-Channel Enhancement Mode Field Effect Transistor(-5.9A,-30V,0.05Ω)(P溝道增強(qiáng)型場效應(yīng)管(漏電流-5.9A, 漏源電壓-30V,導(dǎo)通電阻0.05Ω)) |
ndt454p(j23z) 2 3 4 5 6 |
Fairchild Semiconductor Corporation | TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 5.9A I(D) | SOT-223 |
ndt454 2 3 4 5 6 |
Fairchild Semiconductor Corporation | P-Channel Enhancement Mode Field Effect Transistor |
ndt455n(j23z) 2 3 4 5 6 7 8 9 10 |
Fairchild Semiconductor Corporation | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 11.5A I(D) | SOT-223 |
ndt455n 2 3 4 5 6 7 8 9 10 |
FAIRCHILD SEMICONDUCTOR CORP | N-Channel Enhancement Mode Field Effect Transistor(11.5A,30V,0.015Ω)(N溝道增強(qiáng)型場效應(yīng)管(漏電流11.5A, 漏源電壓30V,導(dǎo)通電阻0.015Ω)) |
ndt456p(j23z) 2 3 4 5 6 7 8 9 10 |
Fairchild Semiconductor Corporation | TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 7.5A I(D) | SOT-223 |
ndt456 2 3 4 5 6 7 8 9 10 |
Fairchild Semiconductor Corporation | P-Channel Enhancement Mode Field Effect Transistor |
ndt456p 2 3 4 5 6 7 8 9 10 |
FAIRCHILD SEMICONDUCTOR CORP | P-Channel Enhancement Mode Field Effect Transistor |
ndtd2412 2 |
Electronic Theatre Controls, Inc. | ISOLATED 3W WIDE INPUT DUAL OUTPUT DC-DC CONVERTERS |
ndt2412 2 |
C | Isolated 3W Wide Input Dual Output DC-DC Converters |
ndt2415 2 |
C | Isolated 3W Wide Input Dual Output DC-DC Converters |
ndt4812 2 |
C | Isolated 3W Wide Input Dual Output DC-DC Converters |
ndt4815 2 |
C | Isolated 3W Wide Input Dual Output DC-DC Converters |
ndtd2415 2 |
Electronic Theatre Controls, Inc. | ISOLATED 3W WIDE INPUT DUAL OUTPUT DC-DC CONVERTERS |
ndtd4812 2 |
Electronic Theatre Controls, Inc. | ISOLATED 3W WIDE INPUT DUAL OUTPUT DC-DC CONVERTERS |
ndtd4815 2 |
Electronic Theatre Controls, Inc. | ISOLATED 3W WIDE INPUT DUAL OUTPUT DC-DC CONVERTERS |
ndy 2 3 |
C | Isolated 3W Wide Input DC-DC Converters |
ne2002-va10a 2 3 4 5 |
Rohm CO.,LTD. | Near edge thermal printhead (8 dots / mm) |
ne2004-va10a 2 3 4 5 |
Rohm CO.,LTD. | Near edge thin film thermal printhead (8 dots / mm) |
ne202 2 3 4 5 6 7 8 9 |
NEC Corp. | ULTRA LOW NOISE K BAND HETERO JUNCTION FET |
ne20248 2 3 4 5 6 7 8 9 |
NEC Corp. | ULTRA LOW NOISE K BAND HETERO JUNCTION FET |
ne20283a 2 3 4 5 6 7 8 9 |
NEC Corp. | ULTRA LOW NOISE K BAND HETERO JUNCTION FET |
ne202xx 2 3 4 5 6 7 8 9 |
NEC Corp. | ULTRA LOW NOISE K BAND HETERO JUNCTION FET |
ne202xx-1.4 2 3 4 5 6 7 8 9 |
NEC Corp. | ULTRA LOW NOISE K BAND HETERO JUNCTION FET |
ne21800 2 3 4 5 |
NEC Corp. | LOW NOISE X BAND GAAS MESFET |
ne21889 2 3 4 5 |
NEC Corp. | LOW NOISE X BAND GAAS MESFET |
ne21935 |
ADVANCED SEMICONDUCTOR INC | NPN SILICON HI FREQUNCY TRANSISTOR |
ne219 2 3 4 5 6 7 8 9 10 11 12 |
NEC Corp. | NPN SILICON HIGH FREQUENCY TRANSISTOR |
ne21903 2 3 4 5 6 7 8 9 10 11 12 |
NEC Corp. | NPN SILICON HIGH FREQUENCY TRANSISTOR |
ne21908 2 3 4 5 6 7 8 9 10 11 12 |
NEC Corp. | NPN SILICON HIGH FREQUENCY TRANSISTOR |
ne21912 2 3 4 5 6 7 8 9 10 11 12 |
NEC Corp. | NPN SILICON HIGH FREQUENCY TRANSISTOR |
ne21935 2 3 4 5 6 7 8 9 10 11 12 |
NEC Corp. | NPN SILICON HIGH FREQUENCY TRANSISTOR |
ne21937 2 3 4 5 6 7 8 9 10 11 12 |
NEC Corp. | NPN SILICON HIGH FREQUENCY TRANSISTOR |