參數(shù)資料
型號(hào): NDT452P
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: P-Channel Enhancement Mode Field Effect Transistor(-3A,-30V,0.18Ω)(P溝道增強(qiáng)型場(chǎng)效應(yīng)管(漏電流-3A, 漏源電壓-30V,導(dǎo)通電阻0.18Ω))
中文描述: 3 A, 30 V, 0.18 ohm, P-CHANNEL, Si, POWER, MOSFET
文件頁(yè)數(shù): 6/10頁(yè)
文件大?。?/td> 227K
代理商: NDT452P
NDT452P Rev. C3
-10
-8
-6
-4
-2
0
0
2
4
6
8
I , DRAIN CURRENT (A)
g
TJ
25°C
F
V = -15V
125°C
0.1
0.2
0.5
- V , DRAIN-SOURCE VOLTAGE (V)
1
2
5
10
30
50
0.01
0.03
0.1
0.3
1
3
10
30
-
D
10s
DC
RDS(ON) LIMIT
100ms
10ms
100us
V = -10V
SINGLE PULSE
R = 42 C/W
T = 25°C
Figure 13. Transconductance Variation with Drain
Current and Temperature.
Figure 14. Maximum Safe Operating Area.
Typical Electrical Characteristics
(continued)
Figure 15. Transient Thermal Response Curve
.
Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change
depending on the circuit board design.
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
10
100
300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
T
r
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t / t
2
R JA
R JA
T - T = P * R (t)
P(pk)
t
1
t
2
相關(guān)PDF資料
PDF描述
NDT452 P-Channel Enhancement Mode Field Effect Transistor
NDT452AP(J23Z) TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 5A I(D) | SOT-223
NDT452AP P-Channel Enhancement Mode Field Effect Transistor(-5A,-30V,0.065Ω)(P溝道增強(qiáng)型場(chǎng)效應(yīng)管(漏電流-5A, 漏源電壓-30V,導(dǎo)通電阻0.065Ω))
NDT453N(J23Z) TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 8A I(D) | SOT-223
NDT453N N-Channel Enhancement Mode Field Effect Transistor(8A,30V,0.028Ω)(N溝道增強(qiáng)型場(chǎng)效應(yīng)管(漏電流8A, 漏源電壓30V,導(dǎo)通電阻0.028Ω))
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDT452P_J23Z 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDT452PCT 制造商:FCS 功能描述:
NDT453N 功能描述:MOSFET 30V N-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDT453N(J23Z) 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 8A I(D) | SOT-223
NDT453N_J23Z 功能描述:MOSFET 30V N-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube