參數(shù)資料
型號(hào)： NDT452AP(J23Z)
廠商： Fairchild Semiconductor Corporation
英文描述： TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 5A I(D) | SOT-223
中文描述： 晶體管| MOSFET的| P通道| 30V的五（巴西）直| 5A條（?。﹟的SOT - 223
文件頁(yè)數(shù)： 1/6頁(yè)
文件大小： 92K
代理商： NDT452AP(J23Z)
June 1996
NDT452AP
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
________________________________________________________________________________
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
Parameter
NDT452AP
Units
V
DSS
Drain-Source Voltage
-30
V
V
GSS
Gate-Source Voltage
±20
V
I
D
Drain Current - Continuous
(Note 1a)
-5
A
- Pulsed
- 15
P
D
Maximum Power Dissipation
(Note 1a)
3
W
(Note 1b)
1.3
(Note 1c)
1.1
T
J
,T
STG
Operating and Storage Temperature Range
-65 to 150
°C
THERMAL CHARACTERISTICS
R
θ
JA
R
θ
JC
* Order option J23Z for cropped center drain lead.
Thermal Resistance, Junction-to-Ambient
(Note 1a)
42
°C/W
Thermal Resistance, Junction-to-Case
(Note 1)
12
°C/W
NDT452AP Rev. B1
-5A, -30V. R
DS(ON)
= 0.065
@ V
GS
= -10V
R
DS(ON)
= 0.1
@ V
GS
= -4.5V.
High density cell design for extremely low R
DS(ON)
.
High power and current handling capability in a widely used
surface mount package.
Power SOT P-Channel enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance
and provide superior switching performance. These devices
are particularly suited for low voltage applications such as
notebook computer power management and DC motor
control.
D
D
S
G
D
S
G
1997 Fairchild Semiconductor Corporation
相關(guān)PDF資料
PDF描述
NDT452AP P-Channel Enhancement Mode Field Effect Transistor（-5A，-30V，0.065Ω）(P溝道增強(qiáng)型場(chǎng)效應(yīng)管（漏電流-5A, 漏源電壓-30V，導(dǎo)通電阻0.065Ω）)
NDT453N(J23Z) TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 8A I(D) | SOT-223
NDT453N N-Channel Enhancement Mode Field Effect Transistor（8A，30V，0.028Ω）(N溝道增強(qiáng)型場(chǎng)效應(yīng)管（漏電流8A, 漏源電壓30V，導(dǎo)通電阻0.028Ω）)
NDT454P P-Channel Enhancement Mode Field Effect Transistor（-5.9A，-30V，0.05Ω）(P溝道增強(qiáng)型場(chǎng)效應(yīng)管（漏電流-5.9A, 漏源電壓-30V，導(dǎo)通電阻0.05Ω）)
NDT454P(J23Z) TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 5.9A I(D) | SOT-223
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDT452APX 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P-Channel 30V 5A SOT223
NDT452P 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDT452P_J23Z 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDT452PCT 制造商:FCS 功能描述:
NDT453N 功能描述:MOSFET 30V N-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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