參數(shù)資料
型號： NDT452AP(J23Z)
廠商： Fairchild Semiconductor Corporation
英文描述： TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 5A I(D) | SOT-223
中文描述： 晶體管| MOSFET的| P通道| 30V的五（巴西）直| 5A條（?。﹟的SOT - 223
文件頁數(shù)： 6/6頁
文件大?。?/td> 92K
代理商： NDT452AP(J23Z)
NDT452AP Rev. B1
Typical Thermal Characteristics
-20
-16
-12
-8
-4
0
0
3
6
9
12
I , DRAIN CURRENT (A)
g
TJ
25°C
F
V = -10V
125°C
Figure 13. Transconductance Variation with Drain
Current and Temperature.
0
0.2
2oz COPPER MOUNTING PAD AREA (in )
0.4
0.6
0.8
2
1
0.5
1
1.5
2
2.5
3
3.5
S
1c
1b
1a
4.5"x5" FR-4 Board
T = 25 C
Still Air
o
Figure 14. SOT-223 Maximum Steady- tate
Power Dissipation versus Copper
Mounting Pad Area.
Figure 16. Maximum Safe Operating Area.
0
0.2
0.4
0.6
0.8
2
1
2
3
4
5
6
2oz COPPER MOUNTING PAD AREA (in )
I
D
1c
1b
1a
4.5"x5" FR-4 Board
T = 25 C
Still Air
V = -10V
o
0.1
0.2
0.5
- V , DRAIN-SOURCE CURRENT (V)
1
2
5
10
30
50
0.01
0.05
0.1
0.5
1
5
10
20
50
-
D
10ms
100ms
1s
10s
DC
100us
1ms
RDS(ON) LIMIT
V = -10V
SINGLE PULSE
R = See Note 1c
T = 25°C
Figure 15. Maximum Steady-State Drain
Current versus Copper Mounting Pad
Area.
Figure 17. Transient Thermal Response Curve
.
Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change
depending on the circuit board design.
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
10
100
300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
T
r
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t / t
2
R JA
R JA
T - T = P * R (t)
P(pk)
t
1
t
2
相關(guān)PDF資料
PDF描述
NDT452AP P-Channel Enhancement Mode Field Effect Transistor（-5A，-30V，0.065Ω）(P溝道增強型場效應(yīng)管（漏電流-5A, 漏源電壓-30V，導(dǎo)通電阻0.065Ω）)
NDT453N(J23Z) TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 8A I(D) | SOT-223
NDT453N N-Channel Enhancement Mode Field Effect Transistor（8A，30V，0.028Ω）(N溝道增強型場效應(yīng)管（漏電流8A, 漏源電壓30V，導(dǎo)通電阻0.028Ω）)
NDT454P P-Channel Enhancement Mode Field Effect Transistor（-5.9A，-30V，0.05Ω）(P溝道增強型場效應(yīng)管（漏電流-5.9A, 漏源電壓-30V，導(dǎo)通電阻0.05Ω）)
NDT454P(J23Z) TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 5.9A I(D) | SOT-223
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NDT452APX 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P-Channel 30V 5A SOT223
NDT452P 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDT452P_J23Z 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NDT452PCT 制造商:FCS 功能描述:
NDT453N 功能描述:MOSFET 30V N-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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