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參數(shù)資料
| 型號(hào)： | NDT453N(J23Z) |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 8A I(D) | SOT-223 |
| 中文描述： | 晶體管| MOSFET的| N溝道| 30V的五（巴西）直| 8A條（丁）|的SOT - 223 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 226K |
| 代理商： | NDT453N(J23Z) |
September 1996
NDT453N
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
___________________________________________________________________________________________
Absolute Maximum Ratings
Symbol
Parameter
T
A
= 25°C unless otherwise not
NDT453N
Units
V
DSS
Drain-Source Voltage
30
V
V
GSS
Gate-Source Voltage
±20
V
I
D
Drain Current - Continuous
(Note 1a)
±8
A
- Pulsed
±15
P
D
Maximum Power Dissipation
(Note 1a)
3
W
(Note 1b)
1.3
(Note 1c)
1.1
T
J
,T
STG
Operating and Storage Temperature Range
-65 to 150
°C
THERMAL CHARACTERISTICS
R
θ
JA
R
θ
JC
* Order option J23Z for cropped center drain lead.
Thermal Resistance, Junction-to-Ambient
(Note 1a)
42
°C/W
Thermal Resistance, Junction-to-Case
(Note 1)
12
°C/W
NDT453N Rev. D1
Power SOT N-Channel enhancement mode power field
effect
transistors
are
produced
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize
on-state resistance and provide superior switching
performance. These devices are particularly suited for low
voltage applications such as notebook computer power
management and other battery powered circuits where fast
switching, low in-line power loss, and resistance to
transients are needed.
using
Fairchild's
8A, 30V. R
DS(ON)
= 0.028
@ V
GS
= 10V.
R
DS(ON)
= 0.042
@ V
GS
= 4.5V.
High density cell design for extremely low R
DS(ON)
.
High power and current handling capability in a widely used
surface mount package.
D
D
S
G
D
S
G
1997 Fairchild Semiconductor Corporation
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NDT453N | N-Channel Enhancement Mode Field Effect Transistor（8A，30V，0.028Ω）(N溝道增強(qiáng)型場(chǎng)效應(yīng)管（漏電流8A, 漏源電壓30V，導(dǎo)通電阻0.028Ω）) |
| NDT454P | P-Channel Enhancement Mode Field Effect Transistor（-5.9A，-30V，0.05Ω）(P溝道增強(qiáng)型場(chǎng)效應(yīng)管（漏電流-5.9A, 漏源電壓-30V，導(dǎo)通電阻0.05Ω）) |
| NDT454P(J23Z) | TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 5.9A I(D) | SOT-223 |
| NDT454 | P-Channel Enhancement Mode Field Effect Transistor |
| NDT455N(J23Z) | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 11.5A I(D) | SOT-223 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NDT454 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel Enhancement Mode Field Effect Transistor |
| NDT454P | 功能描述:MOSFET P-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDT454P(J23Z) | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 5.9A I(D) | SOT-223 |
| NDT454P | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR |
| NDT455N | 功能描述:MOSFET SOT-223 N-CH ENHANCE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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