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參數(shù)資料
| 型號： | NDT455N(J23Z) |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 11.5A I(D) | SOT-223 |
| 中文描述： | 晶體管| MOSFET的| N溝道| 30V的五（巴西）直| 11.5AI（四）|的SOT - 223 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 228K |
| 代理商： | NDT455N(J23Z) |
July 1996
NDT455N
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
________________________________________________________________________________
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
Parameter
NDT455N
Units
V
DSS
Drain-Source Voltage
30
V
V
GSS
Gate-Source Voltage
20
V
I
D
Drain Current
- Continuous
(Note 1a)
± 11.5
A
- Pulsed
± 40
P
D
Maximum Power Dissipation
(Note 1a)
3
W
(Note 1b)
1.3
(Note 1c)
1.1
T
J
,T
STG
Operating and Storage Temperature Range
-65 to 150
°C
THERMAL CHARACTERISTICS
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
(Note 1a)
42
°C/W
Thermal Resistance, Junction-to-Case
(Note 1)
12
°C/W
NDT455N Rev.F
11.5 A, 30 V. R
DS(ON)
= 0.015
@ V
GS
= 10 V
R
DS(ON)
= 0.02
@ V
GS
= 4.5 V.
High density cell design for extremely low R
DS(ON)
.
High power and current handling capability in a widely used
surface mount package.
These N-Channel logic level enhancement mode power field
effect transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density process
is especially tailored to minimize on-state resistance, provide
superior switching performance, and withstand high energy
pulses in the avalanche and commutation modes. These devices
are particularly suited for low voltage applications such as DC
motor control and DC/DC conversion where fast switching, low
in-line power loss, and resistance to transients are needed.
D
D
S
G
D
S
G
1997 Fairchild Semiconductor Corporation
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NDT455N | N-Channel Enhancement Mode Field Effect Transistor（11.5A，30V，0.015Ω）(N溝道增強型場效應(yīng)管（漏電流11.5A, 漏源電壓30V，導通電阻0.015Ω）) |
| NDT456P(J23Z) | TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 7.5A I(D) | SOT-223 |
| NDT456 | P-Channel Enhancement Mode Field Effect Transistor |
| NDT456P | P-Channel Enhancement Mode Field Effect Transistor |
| NDTD2412 | ISOLATED 3W WIDE INPUT DUAL OUTPUT DC-DC CONVERTERS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NDT456 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel Enhancement Mode Field Effect Transistor |
| NDT456P | 功能描述:MOSFET SOT-223 P-CH ENHANCE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDT456P(J23Z) | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 7.5A I(D) | SOT-223 |
| NDT456P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P LOGIC SOT-223 |
| NDT456P_Q | 功能描述:MOSFET SOT-223 P-CH ENHANCE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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