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參數(shù)資料
| 型號(hào)： | NDT456P(J23Z) |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 7.5A I(D) | SOT-223 |
| 中文描述： | 晶體管| MOSFET的| P通道| 30V的五（巴西）直| 7.5AI（四）|的SOT - 223 |
| 文件頁(yè)數(shù)： | 1/10頁(yè) |
| 文件大?。?/td> | 243K |
| 代理商： | NDT456P(J23Z) |
December 1998
NDT456P
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
______________________________________________________________________________
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
Parameter
NDT456P
Units
V
DSS
V
GSS
I
D
Drain-Source Voltage
-30
V
Gate-Source Voltage
±20
V
Drain Current
- Continuous
(Note 1a)
±7.5
A
- Pulsed
±20
P
D
Maximum Power Dissipation
(Note 1a)
3
W
(Note 1b)
1.3
(Note 1c)
1.1
T
J
,T
STG
Operating and Storage Temperature Range
-65 to 150
°C
THERMAL CHARACTERISTICS
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
(Note 1a)
42
°C/W
Thermal Resistance, Junction-to-Case
(Note 1)
12
°C/W
NDT456P Rev. F
-7.5 A, -30 V. R
DS(ON)
= 0.030
@ V
GS
= -10 V
R
DS(ON)
= 0.045
@ V
GS
= -4.5 V
.
High density cell design for extremely low R
DS(ON)
.
High power and current handling capability in a widely
used surface mount package.
Power SOT P-Channel enhancement mode power field
effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process is especially tailored to
minimize on-state resistance and provide superior
switching performance. These devices are particularly
suited for low voltage applications such as notebook
computer power management, battery powered circuits,
and DC motor control.
D
D
S
G
D
S
G
1998 Fairchild Semiconductor Corporation
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