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參數(shù)資料
| 型號： | NDT456P(J23Z) |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 7.5A I(D) | SOT-223 |
| 中文描述： | 晶體管| MOSFET的| P通道| 30V的五（巴西）直| 7.5AI（四）|的SOT - 223 |
| 文件頁數(shù)： | 6/10頁 |
| 文件大?。?/td> | 243K |
| 代理商： | NDT456P(J23Z) |
NDT456P Rev. F
Typical Thermal Characteristics
-10
-8
-6
-4
-2
0
0
3
6
9
12
15
18
I , DRAIN CURRENT (A)
g
25°C
F
V = -5V
125°C
T = -55°C
Figure 13. Transconductance Variation with Drain
Current and Temperature.
0
0.2
2oz COPPER MOUNTING PAD AREA (in )
0.4
0.6
0.8
2
1
0.5
1
1.5
2
2.5
3
3.5
S
1c
1b
1a
4.5"x5" FR-4 Board
T = 25 C
Still Air
A
o
Figure 14. SOT-223 Maximum Steady-State Power
Dissipation versus Copper Mounting Pad
Area.
Figure 17. Transient Thermal Response Curve
.
Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal
response will change depending on the circuit board design.
Figure 16. Maximum Safe Operating Area.
0
0.2
2oz COPPER MOUNTING PAD AREA (in )
0.4
0.6
0.8
2
1
0
2
4
6
8
10
-
1c
1b
1a
4.5"x5" FR-4 Board
T = 25 C
Still Air
V = -10V
D
0.1
0.2
0.5
- V , DRAIN-SOURCE VOLTAGE (V)
1
2
5
10
30
50
0.01
0.03
0.1
0.3
1
3
10
20
40
-
D
RDS(ON) LIMIT
V = -10V
SINGLE PULSE
R = See Note 1c
T = 25°C
A
100ms
1s
DC
10ms
1ms
100us
Figure 15. Maximum Steady-State Drain
Current versus Copper Mounting Pad
Area.
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
10
100
300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
T
r
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t / t
2
R (t) = r(t) * R
R = See Note 1 c
T - T = P * R (t)
P(pk)
t
1
t
2
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