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參數(shù)資料
| 型號(hào)： | NDT456P(J23Z) |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 7.5A I(D) | SOT-223 |
| 中文描述： | 晶體管| MOSFET的| P通道| 30V的五（巴西）直| 7.5AI（四）|的SOT - 223 |
| 文件頁(yè)數(shù)： | 3/10頁(yè) |
| 文件大?。?/td> | 243K |
| 代理商： | NDT456P(J23Z) |
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
V
SD
t
rr
Maximum Continuous Drain-Source Diode Forward Current
-2.5
A
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= - 2.5 A
(Note 2)
V
GS
= 0 V, I
F
= - 2.5 A dI
F
/dt = 100 A/μs
- 0.85
-1.2
V
Reverse Recovery Time
140
ns
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the
P
D
(
t
) =
T
J
T
A
R
θ
JA
(
t
)
=
T
J
T
A
R
θ
JC
+
R
θ
CA
(
t
)
=
I
D
2
(
t
)×
R
DS
(
ON
)
@
T
J
solder mounting surface of the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is defined by users. For general reference: Applications on 4.5"x5" FR-4 PCB under still air environment,
typical R
θ
JA
is found to be:
a. 42
o
C when mounted on a 1 in
2
pad of 2oz copper.
b. 95
o
C when mounted on a 0.066in
2
pad of 2oz copper.
c. 110
o
C/W when mounted on a 0.00123in
2
pad of 2oz copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
NDT456P Rev. F
1a
1b
1c
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