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參數(shù)資料
| 型號(hào)： | NDT456P(J23Z) |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 7.5A I(D) | SOT-223 |
| 中文描述： | 晶體管| MOSFET的| P通道| 30V的五（巴西）直| 7.5AI（四）|的SOT - 223 |
| 文件頁(yè)數(shù)： | 2/10頁(yè) |
| 文件大?。?/td> | 243K |
| 代理商： | NDT456P(J23Z) |
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 μA
V
DS
= -24 V, V
GS
= 0 V
-30
V
Zero Gate Voltage Drain Current
-1
μA
T
J
= 55°C
-10
μA
I
GSSF
I
GSSR
ON CHARACTERISTICS
(Note 2)
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
100
nA
Gate - Body Leakage, Reverse
-100
nA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= - 250 μA
-1
-1.5
-3
V
T
J
= 125°C
-0.5
-1.1
-2.6
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= -10 V, I
D
= -7.5 A
0.026
0.03
T
J
= 125°C
0.035
0.054
V
GS
= - 4.5 V, I
D
= -6 A
V
GS
= -10 V , V
DS
= - 5 V
V
GS
= -4.5 V, V
DS
= - 5 V
V
GS
= -10 V, I
D
= -7.5 A
0.041
0.045
I
D(on)
On-State Drain Current
-20
A
-10
G
fs
DYNAMIC CHARACTERISTICS
Forward Transconductance
13
S
C
iss
C
oss
C
rss
SWITCHING CHARACTERISTICS
(Note 2)
Input Capacitance
V
= -15 V, V
GS
= 0 V,
f = 1.0 MHz
1440
pF
Output Capacitance
905
pF
Reverse Transfer Capacitance
355
pF
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
Turn - On Delay Time
V
DD
= -15 V, I
D
= -7 A,
V
GEN
= -10 V, R
GEN
= 12
10
20
ns
Turn - On Rise Time
65
120
ns
Turn - Off Delay Time
70
130
ns
Turn - Off Fall Time
70
130
ns
Total Gate Charge
V
= -10 V,
I
D
= -7.5 A, V
GS
= -10 V
47
67
nC
Gate-Source Charge
5
nC
Gate-Drain Charge
12
nC
NDT456P Rev. F
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