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參數(shù)資料
| 型號(hào)： | NDT455N(J23Z) |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 11.5A I(D) | SOT-223 |
| 中文描述： | 晶體管| MOSFET的| N溝道| 30V的五（巴西）直| 11.5AI（四）|的SOT - 223 |
| 文件頁(yè)數(shù)： | 3/10頁(yè) |
| 文件大?。?/td> | 228K |
| 代理商： | NDT455N(J23Z) |
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
V
SD
t
rr
Maximum Continuous Drain-Source Diode Forward Current
2.5
A
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 2.5 A
(Note 2)
V
GS
= 0 V, I
F
= 2.5 A dI
F
/dt = 100 A/μs
0.845
1.2
V
Reverse Recovery Time
140
ns
Notes:
P
D
(
t
) =
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the
T
J
T
A
R
θ
JA
(
t
)
=
T
J
T
A
R
θ
JC
+
R
θ
CA
(
t
)
=
I
D
2
(
t
) ×
R
DS
(
ON
)
@
T
J
solder mounting surface of the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is defined by users. For general reference: Applications on 4.5"x5" FR-4 PCB under still air environment, typical
R
θ
JA
is found to be:
a. 42
o
C/W with 1 in
2
of 2 oz copper mounting pad.
b. 95
o
C/W with 0.066 in
2
of 2 oz copper mounting pad.
c. 110
o
C/W with 0.0123 in
2
of 2 oz copper mounting pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
NDT455N Rev.F
1a
1b
1c
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NDT455N | N-Channel Enhancement Mode Field Effect Transistor（11.5A，30V，0.015Ω）(N溝道增強(qiáng)型場(chǎng)效應(yīng)管（漏電流11.5A, 漏源電壓30V，導(dǎo)通電阻0.015Ω）) |
| NDT456P(J23Z) | TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 7.5A I(D) | SOT-223 |
| NDT456 | P-Channel Enhancement Mode Field Effect Transistor |
| NDT456P | P-Channel Enhancement Mode Field Effect Transistor |
| NDTD2412 | ISOLATED 3W WIDE INPUT DUAL OUTPUT DC-DC CONVERTERS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NDT456 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel Enhancement Mode Field Effect Transistor |
| NDT456P | 功能描述:MOSFET SOT-223 P-CH ENHANCE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDT456P(J23Z) | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 7.5A I(D) | SOT-223 |
| NDT456P | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P LOGIC SOT-223 |
| NDT456P_Q | 功能描述:MOSFET SOT-223 P-CH ENHANCE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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