參數(shù)資料
型號(hào): NDT455N(J23Z)
廠商: Fairchild Semiconductor Corporation
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 11.5A I(D) | SOT-223
中文描述: 晶體管| MOSFET的| N溝道| 30V的五(巴西)直| 11.5AI(四)|的SOT - 223
文件頁數(shù): 2/10頁
文件大?。?/td> 228K
代理商: NDT455N(J23Z)
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 μA
V
DS
= 24 V, V
GS
= 0 V
30
V
Zero Gate Voltage Drain Current
1
μA
T
J
= 55°C
10
μA
I
GSSF
I
GSSR
ON CHARACTERISTICS
(Note 2)
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
100
nA
Gate - Body Leakage, Reverse
-100
nA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 μA
1
1.5
3
V
T
J
= 125°C
0.7
0.9
2.2
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= 10 V, I
D
= 11.5 A
0.013
0.015
T
J
= 125°C
0.019
0.03
V
GS
= 4.5 V, I
D
= 10 A
V
GS
= 10 V , V
DS
= 5 V
V
GS
= 4.5 V, V
DS
= 5 V
V
GS
= 10 V, I
D
= 11.5 A
0.018
0.02
I
D(on)
On-State Drain Current
30
A
15
g
FS
DYNAMIC CHARACTERISTICS
Forward Transconductance
26
S
C
iss
C
oss
C
rss
SWITCHING CHARACTERISTICS
(Note 2)
Input Capacitance
V
= 15, V
GS
= 0 V,
f = 1.0 MHz
1220
pF
Output Capacitance
715
pF
Reverse Transfer Capacitance
280
pF
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
Turn - On Delay Time
V
DD
= 15 V, I
D
= 1 A,
V
GEN
= 10 V, R
GEN
= 6
11
20
ns
Turn - On Rise Time
16
30
ns
Turn - Off Delay Time
48
80
ns
Turn - Off Fall Time
40
70
ns
Total Gate Charge
V
= 10 V,
I
D
= 11.5 A, V
GS
= 10 V
43
61
nC
Gate-Source Charge
4
nC
Gate-Drain Charge
11
nC
NDT455N Rev.F
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