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參數(shù)資料
| 型號： | NDT454P(J23Z) |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 5.9A I(D) | SOT-223 |
| 中文描述： | 晶體管| MOSFET的| P通道| 30V的五（巴西）直| 5.9AI（四）|的SOT - 223 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 92K |
| 代理商： | NDT454P(J23Z) |
June 1996
NDT454P
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
____________________________________________________________________________________________
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
Parameter
NDT454P
Units
V
DSS
V
GSS
Drain-Source Voltage
-30
V
Gate-Source Voltage
±20
V
I
D
Drain Current - Continuous
(Note 1a)
±5.9
A
- Pulsed
±15
P
D
Maximum Power Dissipation
(Note 1a)
3
W
(Note 1b)
1.3
(Note 1c)
1.1
T
J
,T
STG
Operating and Storage Temperature Range
-65 to 150
°C
THERMAL CHARACTERISTICS
R
θ
JA
R
θ
JC
* Order option J23Z for cropped center drain lead.
Thermal Resistance, Junction-to-Ambient
(Note 1a)
42
°C/W
Thermal Resistance, Junction-to-Case
(Note 1)
12
°C/W
NDT454P Rev. D2
Power SOT P-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance and provide
superior switching performance. These devices are particularly
suited for low voltage applications such as notebook computer
power management and other battery powered circuits where
fast switching, low in-line power loss, and resistance to
transients are needed.
-5.9A, -30V. R
DS(ON)
= 0.05
@ V
GS
= -10V
R
DS(ON)
= 0.07
@ V
GS
= -6V
R
DS(ON)
= 0.09
@ V
GS
= -4.5V.
High density cell design for extremely low R
DS(ON).
High power and current handling capability in a widely used
surface mount package.
D
D
S
G
D
S
G
1997 Fairchild Semiconductor Corporation
相關PDF資料 |
PDF描述 |
|---|---|
| NDT454 | P-Channel Enhancement Mode Field Effect Transistor |
| NDT455N(J23Z) | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 11.5A I(D) | SOT-223 |
| NDT455N | N-Channel Enhancement Mode Field Effect Transistor（11.5A，30V，0.015Ω）(N溝道增強型場效應管（漏電流11.5A, 漏源電壓30V，導通電阻0.015Ω）) |
| NDT456P(J23Z) | TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 7.5A I(D) | SOT-223 |
| NDT456 | P-Channel Enhancement Mode Field Effect Transistor |
相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NDT455N | 功能描述:MOSFET SOT-223 N-CH ENHANCE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDT455N(J23Z) | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 11.5A I(D) | SOT-223 |
| NDT456 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel Enhancement Mode Field Effect Transistor |
| NDT456P | 功能描述:MOSFET SOT-223 P-CH ENHANCE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDT456P(J23Z) | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 7.5A I(D) | SOT-223 |
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