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參數(shù)資料
| 型號： | NDT452P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | P-Channel Enhancement Mode Field Effect Transistor（-3A，-30V，0.18Ω）(P溝道增強(qiáng)型場效應(yīng)管（漏電流-3A, 漏源電壓-30V，導(dǎo)通電阻0.18Ω）) |
| 中文描述： | 3 A, 30 V, 0.18 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 227K |
| 代理商： | NDT452P |
NDT452P Rev. C3
Typical Electrical Characteristics
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Gate Voltage
and Drain Current.
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation with Drain
Current and Temperature.
Figure 6. Gate Threshold Variation with
Temperature.
Figure 5. Transfer Characteristics.
-10
-8
-6
-4
-2
0
0.5
1
1.5
2
2.5
3
I , DRAIN CURRENT (A)
D
V = -4.0V
R
D
-4.5V
-8.0V
-10V
-6.0V
-7.0V
-5.0V
-50
-25
0
25
50
75
100
125
150
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
T , JUNCTION TEMPERATURE (°C)
D
V = -10V
I = -3A
R
D
-10
-8
-6
-4
-2
0
0.5
1
1.5
2
2.5
3
3.5
I , DRAIN CURRENT (A)
D
TJ
25°C
V = -4.5 V
-4.5V
-10V
125°C
25°C
R
D
-10V
-5
-4
-3
-2
-1
-10
-8
-6
-4
-2
0
V , GATE TO SOURCE VOLTAGE (V)
I
25
125
V = -10V
D
TJ
-50
-25
0
T , JUNCTION TEMPERATURE (°C)
25
50
75
100
125
150
0.75
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
G
I = -250μA
D
V = V
GS
V
t
-5
-4
-3
-2
-1
0
-18
-15
-12
-9
-6
-3
0
V , DRAIN-SOURCE VOLTAGE (V)
I
-8.0 -7.0
-6.0
-5.0
-3.0
V = -10V
D
-4.0
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NDT452 | P-Channel Enhancement Mode Field Effect Transistor |
| NDT452AP(J23Z) | TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 5A I(D) | SOT-223 |
| NDT452AP | P-Channel Enhancement Mode Field Effect Transistor（-5A，-30V，0.065Ω）(P溝道增強(qiáng)型場效應(yīng)管（漏電流-5A, 漏源電壓-30V，導(dǎo)通電阻0.065Ω）) |
| NDT453N(J23Z) | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 8A I(D) | SOT-223 |
| NDT453N | N-Channel Enhancement Mode Field Effect Transistor（8A，30V，0.028Ω）(N溝道增強(qiáng)型場效應(yīng)管（漏電流8A, 漏源電壓30V，導(dǎo)通電阻0.028Ω）) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NDT452P_J23Z | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDT452PCT | 制造商:FCS 功能描述: |
| NDT453N | 功能描述:MOSFET 30V N-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDT453N(J23Z) | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 8A I(D) | SOT-223 |
| NDT453N_J23Z | 功能描述:MOSFET 30V N-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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