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參數(shù)資料
| 型號(hào)： | NDT410EL |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Logic Level Enhancement Mode Field Effect Transistor（2.1A，100V，0.25Ω）(N溝道邏輯增強(qiáng)型場(chǎng)效應(yīng)管（漏電流2.1A, 漏源電壓100V，導(dǎo)通電阻0.25Ω）) |
| 中文描述： | 2.1 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁(yè)數(shù)： | 3/10頁(yè) |
| 文件大?。?/td> | 228K |
| 代理商： | NDT410EL |
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
V
SD
t
rr
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is guaranteed by
design while R
θ
CA
is determined by the user's board design.
P
D
(
t
) =
Typical R
θ
using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
a. 42
b. 95
o
C/W when mounted on a 0.04 in
pad of 2oz copper.
Maximum Continuous Drain-Source Diode Forward Current
2.3
A
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 2.3 A
(Note 2)
V
GS
= 0 V, I
S
= 2.3 A, dI
F
/dt = 100A/μs
1.3
V
Reverse Recovery Time
150
ns
T
J
T
A
R
θ
(
t
)
=
J
A
R
+
R
(
t
)
=
I
D
2
(
t
) ×
R
DS
(
ON
)
@
T
J
o
C/W when mounted on a 1 in
2
pad of 2oz copper.
c. 110
o
C/W when mounted on a 0.006 in
2
pad of 2oz copper.
1a
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
NDT410EL Rev. B1
1b
1c
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NDT410EL(J23Z) | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 2.1A I(D) | SOT-223 |
| NDT451AN | N-Channel Enhancement Mode Field Effect Transistor（7.2A，30V，0.035Ω）(N溝道增強(qiáng)型場(chǎng)效應(yīng)管（漏電流7.2A, 漏源電壓30V，導(dǎo)通電阻0.035Ω）) |
| NDT451N | N-Channel Enhancement Mode Field Effect Transistor（5.5A，30V，0.05Ω）(N溝道增強(qiáng)型場(chǎng)效應(yīng)管（漏電流5.5A, 漏源電壓30V，導(dǎo)通電阻0.05Ω）) |
| NDT451 | N-Channel Enhancement Mode Field Effect Transistor |
| NDT451AN(J23Z) | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 7.2A I(D) | SOT-223 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NDT410EL(J23Z) | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 2.1A I(D) | SOT-223 |
| NDT451 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| NDT451AN | 功能描述:MOSFET N-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDT451AN(J23Z) | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 7.2A I(D) | SOT-223 |
| NDT451AN_09 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
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