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參數(shù)資料
| 型號： | NDT451 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | N溝道增強型場效應(yīng)管 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 226K |
| 代理商： | NDT451 |
September 1996
NDT451N
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
___________________________________________________________________________________________________________
Absolute Maximum Ratings
Symbol
Parameter
T
A
= 25°C unless otherwise noted
NDT451N
Units
V
DSS
Drain-Source Voltage
30
V
V
GSS
I
D
Gate-Source Voltage
±20
V
Drain Current
- Continuous
(Note 1a)
±5.5
A
- Pulsed
±25
P
D
Maximum Power Dissipation
(Note 1a)
3
W
(Note 1b)
1.3
(Note 1c)
1.1
T
J
,T
STG
Operating and Storage Temperature Range
-65 to 150
°C
THERMAL CHARACTERISTICS
R
θ
JA
R
θ
JC
* Order option J23Z for cropped center drain lead.
Thermal Resistance, Junction-to-Ambient
(Note 1a)
42
°C/W
Thermal Resistance, Junction-to-Case
(Note 1)
12
°C/W
NDT451N Rev. C2
Power SOT N-Channel enhancement mode power field
effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize
on-state resistance and provide superior switching
performance.
These devices are particularly suited for low
voltage applications such as DC motor control and
DC/DC conversion where fast switching, low in-line power
loss, and resistance to transients are needed.
5.5A, 30V. R
DS(ON)
= 0.05
@ V
GS
= 10V.
High density cell design for extremely low R
DS(ON)
.
High power and current handling capability in a widely used
surface mount package.
D
D
S
G
D
S
G
1997 Fairchild Semiconductor Corporation
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NDT451AN(J23Z) | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 7.2A I(D) | SOT-223 |
| NDT452P | P-Channel Enhancement Mode Field Effect Transistor（-3A，-30V，0.18Ω）(P溝道增強型場效應(yīng)管（漏電流-3A, 漏源電壓-30V，導(dǎo)通電阻0.18Ω）) |
| NDT452 | P-Channel Enhancement Mode Field Effect Transistor |
| NDT452AP(J23Z) | TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 5A I(D) | SOT-223 |
| NDT452AP | P-Channel Enhancement Mode Field Effect Transistor（-5A，-30V，0.065Ω）(P溝道增強型場效應(yīng)管（漏電流-5A, 漏源電壓-30V，導(dǎo)通電阻0.065Ω）) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NDT451AN | 功能描述:MOSFET N-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDT451AN(J23Z) | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 7.2A I(D) | SOT-223 |
| NDT451AN_09 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| NDT451AN_J23Z | 功能描述:MOSFET N-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDT451AN_Q | 功能描述:MOSFET N-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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