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參數(shù)資料
| 型號： | NDT451 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | N溝道增強型場效應(yīng)管 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大小： | 226K |
| 代理商： | NDT451 |
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 μA
V
DS
= 24 V, V
GS
= 0 V
30
V
Zero Gate Voltage Drain Current
2
μA
T
J
= 55°C
20
μA
I
GSSF
I
GSSR
ON CHARACTERISTICS
(Note 2)
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
100
nA
Gate - Body Leakage, Reverse
-100
nA
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 μA
1
1.6
3
V
T
J
= 125°C
0.7
1.2
2.2
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= 10 V, I
D
= 5.5 A
0.042
0.05
T
J
= 125°C
0.065
0.1
V
GS
= 4.5 V, I
D
= 4.3 A
V
GS
= 10 V, V
DS
= 5 V
V
GS
= 4.5 V, V
DS
= 5 V
V
DS
= 10 V, I
D
= 5.5 A
0.064
0.08
I
D(on)
On-State Drain Current
18
A
15
g
FS
DYNAMIC CHARACTERISTICS
Forward Transconductance
6
S
C
iss
C
oss
C
rss
SWITCHING CHARACTERISTICS
(Note 2)
Input Capacitance
V
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
730
pF
Output Capacitance
370
pF
Reverse Transfer Capacitance
140
pF
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
Turn - On Delay Time
V
DD
= 15 V, I
D
= 1.0 A,
V
GEN
= 10 V, R
GEN
= 6
20
30
ns
Turn - On Rise Time
15
25
ns
Turn - Off Delay Time
19
40
ns
Turn - Off Fall Time
10
30
ns
Total Gate Charge
V
= 10 V,
I
D
= 5.5 A, V
GS
= 10 V
16
25
nC
Gate-Source Charge
1.8
3
nC
Gate-Drain Charge
4.5
7
nC
NDT451N Rev. C2
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PDF描述 |
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| NDT451AN(J23Z) | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 7.2A I(D) | SOT-223 |
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| NDT452 | P-Channel Enhancement Mode Field Effect Transistor |
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| NDT452AP | P-Channel Enhancement Mode Field Effect Transistor（-5A，-30V，0.065Ω）(P溝道增強型場效應(yīng)管（漏電流-5A, 漏源電壓-30V，導(dǎo)通電阻0.065Ω）) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NDT451AN | 功能描述:MOSFET N-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDT451AN(J23Z) | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 7.2A I(D) | SOT-223 |
| NDT451AN_09 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| NDT451AN_J23Z | 功能描述:MOSFET N-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDT451AN_Q | 功能描述:MOSFET N-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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