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參數(shù)資料
| 型號(hào)： | NDT410EL |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Logic Level Enhancement Mode Field Effect Transistor（2.1A，100V，0.25Ω）(N溝道邏輯增強(qiáng)型場(chǎng)效應(yīng)管（漏電流2.1A, 漏源電壓100V，導(dǎo)通電阻0.25Ω）) |
| 中文描述： | 2.1 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 6/10頁 |
| 文件大?。?/td> | 228K |
| 代理商： | NDT410EL |
NDT410EL Rev. B1
0.1
0.2
0.5
1
2
5
10
20
50
100
200
0.1
0.2
0.5
1
2
5
10
20
V , DRAIN-SOURCE VOLTAGE (V)
I
D
V = 5V
SINGLE PULSE
T = 25°C
RDSON Lmt
100μs
1ms
10ms
1s
10s
DC
10μs
Figure 13. Transconductance Variation with Drain
Current and Temperature.
Figure 16. Maximum Safe
Operating Area.
Typical Electrical and Thermal Characteristics
0
2
4
6
8
10
0
2
4
6
8
10
12
I , DRAIN CURRENT (A)
g
TJ
25°C
F
V = 10V
125°C
Figure 15. Maximum Steady-State Drain Current
versus Copper Mounting Pad Area.
0
0.2
2oz COPPER MOUNTING PAD AREA (in )
0.4
0.6
0.8
2
1
0.5
1
1.5
2
2.5
3
3.5
S
1c
1b
1a
4.5"x5" FR-4 Board
T = 25 C
Still Air
o
Figure 14. SOT-223 Maximum Steady- State Power
Dissipation versus Copper Mounting Pad Area.
0
0.2
2oz COPPER MOUNTING PAD AREA (in )
0.4
0.6
0.8
1
0
0.5
1
1.5
2
2.5
3
I
D
1c
1b
1a
4.5"x5" FR-4 Board
T = 25 C
Still Air
V = 5V
o
Figure 17. Transient Thermal Response Curve
.
Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change
depending on the circuit board design.
0.0001
0.001
0.01
0.1
t , TIME (sec)
1
10
100
300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
T
r
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
Duty Cycle, D = t / t
2
R JA
R JA
T - T = P * R (t)
P(pk)
t
1
t
2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NDT410EL(J23Z) | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 2.1A I(D) | SOT-223 |
| NDT451AN | N-Channel Enhancement Mode Field Effect Transistor（7.2A，30V，0.035Ω）(N溝道增強(qiáng)型場(chǎng)效應(yīng)管（漏電流7.2A, 漏源電壓30V，導(dǎo)通電阻0.035Ω）) |
| NDT451N | N-Channel Enhancement Mode Field Effect Transistor（5.5A，30V，0.05Ω）(N溝道增強(qiáng)型場(chǎng)效應(yīng)管（漏電流5.5A, 漏源電壓30V，導(dǎo)通電阻0.05Ω）) |
| NDT451 | N-Channel Enhancement Mode Field Effect Transistor |
| NDT451AN(J23Z) | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 7.2A I(D) | SOT-223 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NDT410EL(J23Z) | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 2.1A I(D) | SOT-223 |
| NDT451 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
| NDT451AN | 功能描述:MOSFET N-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDT451AN(J23Z) | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 7.2A I(D) | SOT-223 |
| NDT451AN_09 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
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