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參數(shù)資料
| 型號： | NDT2955 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | P-Channel Enhancement Mode Field Effect Transistor（-2.5A，-60V，0.3Ω）(P溝道增強(qiáng)型場效應(yīng)管（漏電流-2.5A, 漏源電壓-60V，導(dǎo)通電阻0.3Ω）) |
| 中文描述： | 2.5 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 92K |
| 代理商： | NDT2955 |
September 1996
NDT2955
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
_______________________________________________________________________________________________________
Absolute Maximum Ratings
Symbol
Parameter
T
A
= 25°C unless otherwise noted
NDT2955
Units
V
DSS
Drain-Source Voltage
-60
V
V
GSS
Gate-Source Voltage
±20
V
I
D
Drain Current
- Continuous
(Note 1a)
-2.5
A
- Pulsed
-15
P
D
Maximum Power Dissipation
(Note 1a)
3
W
(Note 1b)
1.3
(Note 1c)
1.1
T
J
,T
STG
Operating and Storage Temperature Range
-65 to 150
°C
THERMAL CHARACTERISTICS
R
θ
JA
R
θ
JC
* Order option J23Z for cropped center drain lead.
Thermal Resistance, Junction-to-Ambient
(Note 1a)
42
°C/W
Thermal Resistance, Junction-to-Case
(Note 1)
12
°C/W
NDT2955 Rev. B2
Power SOT P-Channel enhancement mode power field
effect
transistors
are
produced
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize
on-state resistance and provide superior switching
performance. These devices are particularly suited for low
voltage applications such as notebook computer power
management and DC motor control.
using
Fairchild's
-2.5A, -60V. R
DS(ON)
= 0.3
@ V
GS
= -10V.
High density cell design for extremely low R
DS(ON)
.
High power and current handling capability in a widely used
surface mount package.
D
D
S
G
D
S
G
1997 Fairchild Semiconductor Corporation
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NDT2955(J23Z) | TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 2.5A I(D) | SOT-223 |
| NDT3055L | N-Channel Logic Level Enhancement Mode Field Effect Transistor（4A，60V，0.1Ω）(N溝道邏輯增強(qiáng)型場效應(yīng)管（漏電流4A, 漏源電壓60V，導(dǎo)通電阻0.1Ω）) |
| NDT3055 | N-Channel Enhancement Mode Field Effect Transistor（4A，60V，0.1Ω）(N溝道增強(qiáng)型場效應(yīng)管（漏電流4A, 漏源電壓60V，導(dǎo)通電阻0.1Ω）) |
| NDT410EL | N-Channel Logic Level Enhancement Mode Field Effect Transistor（2.1A，100V，0.25Ω）(N溝道邏輯增強(qiáng)型場效應(yīng)管（漏電流2.1A, 漏源電壓100V，導(dǎo)通電阻0.25Ω）) |
| NDT410EL(J23Z) | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 2.1A I(D) | SOT-223 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NDT2955(J23Z) | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 2.5A I(D) | SOT-223 |
| NDT2955 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P-CH 60V 2.5A SOT-223 RL |
| NDT2955 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SOT-223 |
| NDT2955_02 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel Enhancement Mode Field Effect Transistor |
| NDT2955_F081 | 制造商:Fairchild Semiconductor 功能描述:NDT2955_F081 |
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