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參數(shù)資料
| 型號： | NDT2955 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | P-Channel Enhancement Mode Field Effect Transistor（-2.5A，-60V，0.3Ω）(P溝道增強型場效應(yīng)管（漏電流-2.5A, 漏源電壓-60V，導通電阻0.3Ω）) |
| 中文描述： | 2.5 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 92K |
| 代理商： | NDT2955 |
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= -250 μA
-60
V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= -60 V, V
GS
= 0 V
-10
μA
T
J
= 125
o
C
-100
μA
I
GSSF
Gate - Body Leakage, Forward
V
GS
= 20 V, V
DS
= 0 V
100
nA
I
GSSR
Gate - Body Leakage, Reverse
V
GS
= -20 V, V
DS
= 0 V
-100
nA
ON CHARACTERISTICS
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= -250 μA
-2
-2.4
-4
V
T
J
= 125
o
C
-0.8
-2
-2.6
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= -10 V, I
D
= -2.5 A
0.21
0.3
T
J
= 125
o
C
0.3
0.45
V
GS
= -4.5 V, I
D
= -2 A
V
GS
= -10 V, V
DS
= -5 V
0.36
0.5
I
D(on)
On-State Drain Current
-12
A
g
FS
DYNAMIC CHARACTERISTICS
Forward Transconductance
V
DS
= -10 V, I
D
= -2.5 A
3.5
S
C
iss
Input Capacitance
V
= -25 V, V
GS
= 0 V,
f = 1.0 MHz
570
pF
C
oss
Output Capacitance
140
pF
C
rss
Reverse Transfer Capacitance
40
pF
SWITCHING CHARACTERISTICS
(Note 2)
t
D(on)
Turn - On Delay Time
V
DD
= -30 V, I
D
= -1 A,
V
GEN
= -10 V, R
GEN
= 6
8
15
ns
t
r
t
D(off)
Turn - On Rise Time
20
40
ns
Turn - Off Delay Time
20
40
ns
t
f
Turn - Off Fall Time
5
20
ns
Q
g
Total Gate Charge
V
= -30 V,
I
D
= -2.5 A, V
GS
= -10 V
16
25
nC
Q
gs
Gate-Source Charge
2
5
nC
Q
gd
Gate-Drain Charge
4
8
nC
NDT2955 Rev. B2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NDT2955(J23Z) | TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 2.5A I(D) | SOT-223 |
| NDT3055L | N-Channel Logic Level Enhancement Mode Field Effect Transistor（4A，60V，0.1Ω）(N溝道邏輯增強型場效應(yīng)管（漏電流4A, 漏源電壓60V，導通電阻0.1Ω）) |
| NDT3055 | N-Channel Enhancement Mode Field Effect Transistor（4A，60V，0.1Ω）(N溝道增強型場效應(yīng)管（漏電流4A, 漏源電壓60V，導通電阻0.1Ω）) |
| NDT410EL | N-Channel Logic Level Enhancement Mode Field Effect Transistor（2.1A，100V，0.25Ω）(N溝道邏輯增強型場效應(yīng)管（漏電流2.1A, 漏源電壓100V，導通電阻0.25Ω）) |
| NDT410EL(J23Z) | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 2.1A I(D) | SOT-223 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NDT2955(J23Z) | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 2.5A I(D) | SOT-223 |
| NDT2955 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P-CH 60V 2.5A SOT-223 RL |
| NDT2955 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SOT-223 |
| NDT2955_02 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel Enhancement Mode Field Effect Transistor |
| NDT2955_F081 | 制造商:Fairchild Semiconductor 功能描述:NDT2955_F081 |
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