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參數(shù)資料
| 型號(hào)： | NDT2955 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | P-Channel Enhancement Mode Field Effect Transistor（-2.5A，-60V，0.3Ω）(P溝道增強(qiáng)型場(chǎng)效應(yīng)管（漏電流-2.5A, 漏源電壓-60V，導(dǎo)通電阻0.3Ω）) |
| 中文描述： | 2.5 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大?。?/td> | 92K |
| 代理商： | NDT2955 |
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
Maximum Continuous Drain-Source Diode Forward Current
-2.3
A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= -2.5 A
(Note2)
-1.3
V
Notes:
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is guaranteed by
design while R
θ
CA
is determined by the user's board design.
P
D
(
t
) =
T
J
T
A
R
θ
J A
(
t
)
=
T
J
T
A
R
θ
J C
+
R
θ
CA
(
t
)
=
I
D
2
(
t
)×
R
DS
(
ON
)
T
J
Typical R
θ
JA
using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
a. 42
o
C/W when mounted on a 1 in
2
pad of 2oz copper.
b. 95
o
C/W when mounted on a 0.066 in
2
pad of 2oz copper.
c. 110
o
C/W when mounted on a 0.0123 in
2
pad of 2oz copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
NDT2955 Rev. B2
1a
1b
1c
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NDT2955(J23Z) | TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 2.5A I(D) | SOT-223 |
| NDT3055L | N-Channel Logic Level Enhancement Mode Field Effect Transistor（4A，60V，0.1Ω）(N溝道邏輯增強(qiáng)型場(chǎng)效應(yīng)管（漏電流4A, 漏源電壓60V，導(dǎo)通電阻0.1Ω）) |
| NDT3055 | N-Channel Enhancement Mode Field Effect Transistor（4A，60V，0.1Ω）(N溝道增強(qiáng)型場(chǎng)效應(yīng)管（漏電流4A, 漏源電壓60V，導(dǎo)通電阻0.1Ω）) |
| NDT410EL | N-Channel Logic Level Enhancement Mode Field Effect Transistor（2.1A，100V，0.25Ω）(N溝道邏輯增強(qiáng)型場(chǎng)效應(yīng)管（漏電流2.1A, 漏源電壓100V，導(dǎo)通電阻0.25Ω）) |
| NDT410EL(J23Z) | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 2.1A I(D) | SOT-223 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NDT2955(J23Z) | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 2.5A I(D) | SOT-223 |
| NDT2955 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P-CH 60V 2.5A SOT-223 RL |
| NDT2955 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SOT-223 |
| NDT2955_02 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:P-Channel Enhancement Mode Field Effect Transistor |
| NDT2955_F081 | 制造商:Fairchild Semiconductor 功能描述:NDT2955_F081 |
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