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參數(shù)資料
| 型號： | NDT3055 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor（4A，60V，0.1Ω）(N溝道增強(qiáng)型場效應(yīng)管（漏電流4A, 漏源電壓60V，導(dǎo)通電阻0.1Ω）) |
| 中文描述： | 4 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 226K |
| 代理商： | NDT3055 |
NDT3055
N-Channel Enhancement Mode Field Effect Transistor
May 1998
General Description Features
Absolute Maximum Ratings
T
A
= 25
o
C unless otherwise noted
Symbol
Parameter
NDT3055
Units
V
DSS
Drain-Source Voltage
60
V
V
GSS
I
D
Gate-Source Voltage - Continuous
±20
V
Maximum Drain Current - Continuous
(Note 1a)
4
A
- Pulsed
25
P
D
Maximum Power Dissipation
(Note 1a)
3
W
(Note 1b)
1.3
(Note 1c)
1.1
T
J
,T
STG
Operating and Storage Temperature Range
-65 to 150
°C
THERMAL CHARACTERISTICS
R
θ
JA
R
θ
JC
* Order option J23Z for cropped center drain lead.
Thermal Resistance, Junction-to-Ambient
(Note 1a)
42
°C/W
Thermal Resistance, Junction-to-Case
(Note 1)
12
°C/W
NDT3055 Rev.B
4 A, 60 V. R
DS(ON)
= 0.100
@ V
GS
= 10 V.
High density cell design for extremely low R
DS(ON)
.
High power and current handling capability in a widely used
surface mount package.
SOIC-16
SuperSOT
TM
-3
SuperSOT
TM
-8
SO-8
SOT-223
SuperSOT
TM
-6
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high
density process is especially tailored to minimize
on-state resistance and provide superior switching
performance.
These devices are particularly suited for
low voltage applications such as DC motor control and
DC/DC conversion where fast switching, low in-line
power loss, and resistance to transients are needed.
G
D
S
D
SOT-223
D
D
S
G
G
D
S
SOT-223*
(J23Z)
D
S
G
1998 Fairchild Semiconductor Corporation
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PDF描述 |
|---|---|
| NDT410EL | N-Channel Logic Level Enhancement Mode Field Effect Transistor（2.1A，100V，0.25Ω）(N溝道邏輯增強(qiáng)型場效應(yīng)管（漏電流2.1A, 漏源電壓100V，導(dǎo)通電阻0.25Ω）) |
| NDT410EL(J23Z) | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 2.1A I(D) | SOT-223 |
| NDT451AN | N-Channel Enhancement Mode Field Effect Transistor（7.2A，30V，0.035Ω）(N溝道增強(qiáng)型場效應(yīng)管（漏電流7.2A, 漏源電壓30V，導(dǎo)通電阻0.035Ω）) |
| NDT451N | N-Channel Enhancement Mode Field Effect Transistor（5.5A，30V，0.05Ω）(N溝道增強(qiáng)型場效應(yīng)管（漏電流5.5A, 漏源電壓30V，導(dǎo)通電阻0.05Ω）) |
| NDT451 | N-Channel Enhancement Mode Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NDT3055(J23Z) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 4A I(D) | SOT-223 |
| NDT3055_J23Z | 功能描述:MOSFET N-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDT3055-CUT TAPE | 制造商:FAIRCHILD 功能描述:NDT Series N-Channel 60 V 0.1 O Enhancement Mode Field Effect Transistor SOT-223 |
| NDT3055L | 功能描述:MOSFET SOT-223 N-CH LOGIC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NDT3055L(J23Z) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 3.7A I(D) | SOT-223 |
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